Shmagin, V. B., Remizov, D. Yu., Krasil’nik, Z. F., Kuznetsov, V. P., Shabanov, V. N., Krasil’nikova, L. V., Kryzhkov, D. I., Drozdov, M. N. (2004) Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy. Physics of the Solid State, 46. 109-112 doi:10.1134/1.1641934

See Also

These are possibly similar items as determined by title/reference text matching only.

	Shengurov, V. G., Svetlov, S. P., Chalkov, V. Yu., Andreev, B. A., Krasil’nik, Z. F., Kryzhkov, D. I. (2004) Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy. Physics of the Solid State, 46. 101-103 doi:10.1134/1.1641932
	Andreev, B. A., Krasil’nik, Z. F., Kryzhkov, D. I., Yablonskii, A. N., Kuznetsov, V. P., Gregorkiewicz, T., Klik, M. A. J. (2004) Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures. Physics of the Solid State, 46. 97-100 doi:10.1134/1.1641931
	Svetlov, S. P., Chalkov, V. Yu., Shengurov, V. G., Drozdov, Yu. N., Krasil’nik, Z. F., Krasil’nikova, L. V., Stepikhova, M. V., Pavlov, D. A., Pavlova, T. V., Shilyaev, P. A., Khokhlov, A. F. (2004) Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers. Physics of the Solid State, 46. 10-12 doi:10.1134/1.1641910
	Shmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
	Kuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455
	Andreev, B. A., Krasil’nik, Z. F., Kuznetsov, V. P., Soldatkin, A. O., Bresler, M. S., Gusev, O. B., Yassievich, I. N. (2001) Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method. Physics of the Solid State, 43. 1012-1017 doi:10.1134/1.1378137
	Vostokov, N. V., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Shaleev, M. V., Yablonskii, A. N. (2004) Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes. Physics of the Solid State, 46. 60-63 doi:10.1134/1.1641921
	Valakh, M. Ya., Dzhagan, V. N., Lytvyn, P. M., Yukhymchuk, V. A., Krasil’nik, Z. F., Novikov, A. V., Lobanov, D. N. (2004) Composition and elastic stresses in multilayer structures with Si1−x Gex nanoislands. Physics of the Solid State, 46. 85-88 doi:10.1134/1.1641928
	Valakh, M. Ya., Dzhagan, V. N., Krasil’nik, Z. F., Lytvyn, P. M., Lobanov, D. N., Mozdor, E. V., Novikov, A. V., Yukhymchuk, V. A., Yaremko, A. M. (2004) Correlation between the energy of SiGe nanoislands and their shape and size. Physics of the Solid State, 46. 67-70 doi:10.1134/1.1641923
	Remizov, D. Yu. (2005) Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 98pp. doi:10.1134/1.1853454
	Soshnikov, I. P., Cirlin, G. É., Tonkikh, A. A., Nevedomskiĭ, V. N., Samsonenko, Yu. B., Ustinov, V. M. (2007) Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy. Physics of the Solid State, 49. 1440-1445 doi:10.1134/s1063783407080069