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Kesler, V. G., Logvinskii, L. M., Mashanov, V. I., Pchelyakov, O. P., Ul’yanov, V. V. (2002) Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy. Physics of the Solid State, 44. 709-713 doi:10.1134/1.1470563

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy
JournalPhysics of the Solid State
AuthorsKesler, V. G.Author
Logvinskii, L. M.Author
Mashanov, V. I.Author
Pchelyakov, O. P.Author
Ul’yanov, V. V.Author
Year2002 (April)Volume44
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1470563Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6150996Long-form Identifiermindat:1:5:6150996:8
GUID0
Full ReferenceKesler, V. G., Logvinskii, L. M., Mashanov, V. I., Pchelyakov, O. P., Ul’yanov, V. V. (2002) Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy. Physics of the Solid State, 44. 709-713 doi:10.1134/1.1470563
Plain TextKesler, V. G., Logvinskii, L. M., Mashanov, V. I., Pchelyakov, O. P., Ul’yanov, V. V. (2002) Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy. Physics of the Solid State, 44. 709-713 doi:10.1134/1.1470563
In(n.d.) Physics of the Solid State Vol. 44. Pleiades Publishing Ltd

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