Bolkhovityanov, Yu. B., Gutakovskii, A. K., Mashanov, V. I., Pchelyakov, O. P., Revenko, M. A., Sokolov, L. V. (2002) Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer. Journal of Applied Physics, 91 (7). 4710-4714 doi:10.1063/1.1456959

See Also

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	Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Journal of Applied Physics, 96 (12). 7665-7674 doi:10.1063/1.1809772
	Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Applied Physics Letters, 84 (23). 4599-4601 doi:10.1063/1.1734683
	Romanov, S. I., Mashanov, V. I., Sokolov, L. V., Gutakovskii, A., Pchelyakov, O. P. (1999) GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon. Applied Physics Letters, 75 (26). 4118-4120 doi:10.1063/1.125555
	Kesler, V. G., Logvinskii, L. M., Mashanov, V. I., Pchelyakov, O. P., Ul’yanov, V. V. (2002) Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy. Physics of the Solid State, 44. 709-713 doi:10.1134/1.1470563
	Bolkhovityanov, Yu. B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2006) Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value. Journal of Crystal Growth, 297 (1). 57-60 doi:10.1016/j.jcrysgro.2006.09.029
	Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2015) Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness. Physics of the Solid State, 57. 765-770 doi:10.1134/s1063783415040071
	Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Optimization of the plastic relaxation of misfit stresses in GexSi1−x /Si(001) (x≤0.61) heterostructures. Technical Physics Letters, 30. 68-70 doi:10.1134/1.1646719
	Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film. Applied Physics Letters, 85 (25). 6140-6142 doi:10.1063/1.1839271
	Talochkin, A. B., Shklyaev, A. A., Mashanov, V. I. (2014) Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy. Journal of Applied Physics, 115 (14). 144306pp. doi:10.1063/1.4871283
	Talochkin, A. B., Mashanov, V. I. (2014) Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy. Applied Physics Letters, 105 (26). 263101pp. doi:10.1063/1.4905054
	Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V. (2006) Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy. Journal of Crystal Growth, 293 (2). 247-252 doi:10.1016/j.jcrysgro.2006.05.018