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Bolkhovityanov, Yu. B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2006) Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value. Journal of Crystal Growth, 297 (1). 57-60 doi:10.1016/j.jcrysgro.2006.09.029

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Reference TypeJournal (article/letter/editorial)
TitleSb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value
JournalJournal of Crystal Growth
AuthorsBolkhovityanov, Yu. B.Author
Deryabin, A.S.Author
Gutakovskii, A.K.Author
Sokolov, L.V.Author
Year2006 (December)Volume297
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.09.029Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2887263Long-form Identifiermindat:1:5:2887263:6
GUID0
Full ReferenceBolkhovityanov, Yu. B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2006) Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value. Journal of Crystal Growth, 297 (1). 57-60 doi:10.1016/j.jcrysgro.2006.09.029
Plain TextBolkhovityanov, Yu. B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2006) Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value. Journal of Crystal Growth, 297 (1). 57-60 doi:10.1016/j.jcrysgro.2006.09.029
In(2006, December) Journal of Crystal Growth Vol. 297 (1) Elsevier BV

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Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V. (2006) Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy. Journal of Crystal Growth, 293 (2). 247-252 doi:10.1016/j.jcrysgro.2006.05.018
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V. (2005) Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation. Journal of Crystal Growth, 280 (1). 309-319 doi:10.1016/j.jcrysgro.2005.03.051
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2012) Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation. Journal of Crystal Growth, 338 (1). 12-15 doi:10.1016/j.jcrysgro.2011.10.005
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2018) Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures. Journal of Crystal Growth, 483. 265-268 doi:10.1016/j.jcrysgro.2017.12.017
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2008) Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (001)→(111) Si substrates. Journal of Crystal Growth, 310 (15). 3422-3427 doi:10.1016/j.jcrysgro.2008.05.002
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Journal of Applied Physics, 96 (12). 7665-7674 doi:10.1063/1.1809772
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V. (2010) Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4. Journal of Crystal Growth, 312 (21). 3080-3084 doi:10.1016/j.jcrysgro.2010.07.041
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2015) Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness. Physics of the Solid State, 57. 765-770 doi:10.1134/s1063783415040071
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Applied Physics Letters, 84 (23). 4599-4601 doi:10.1063/1.1734683
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Mashanov, V. I., Pchelyakov, O. P., Revenko, M. A., Sokolov, L. V. (2002) Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer. Journal of Applied Physics, 91 (7). 4710-4714 doi:10.1063/1.1456959
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2019) Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure. Physics of the Solid State, 61. 145-148 doi:10.1134/s1063783419020094
 
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