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Vostokov, N. V. (2005) Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure. Physics of the Solid State, 47. 42pp. doi:10.1134/1.1853441

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Reference TypeJournal (article/letter/editorial)
TitleSi[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure
JournalPhysics of the Solid State
AuthorsVostokov, N. V.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853441Search in ResearchGate
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Mindat Ref. ID6151992Long-form Identifiermindat:1:5:6151992:9
GUID0
Full ReferenceVostokov, N. V. (2005) Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure. Physics of the Solid State, 47. 42pp. doi:10.1134/1.1853441
Plain TextVostokov, N. V. (2005) Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure. Physics of the Solid State, 47. 42pp. doi:10.1134/1.1853441
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

See Also

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Vostokov, N. V. (2005) Influence of a Predeposited Si[sub 1 – ][sub x]Ge[sub x] Layer on the Growth of Self-Assembled SiGe∕Si(001) Islands. Physics of the Solid State, 47. 26pp. doi:10.1134/1.1853437
Argunova, T. S. (2005) X-ray Studies of Si[sub 1 – ][sub x]Ge[sub x] Single Crystals. Physics of the Solid State, 47. 1225pp. doi:10.1134/1.1992596
Krasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453
Arzhnikov, A. K. (2005) Magnetic Moments and Hyperfine Magnetic Fields in Ordered and Disordered Quasi-Binary Fe[sub 75](Si[sub 1 – ][sub x]Ge[sub x])[sub 25] Alloys. Physics of the Solid State, 47. 2063pp. doi:10.1134/1.2131146
Kim, Jin-Won (1996) Low Pressure Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Films Using Si[sub 2]H[sub 6] and GeH[sub 4] Source Gases. Journal of the Electrochemical Society, 143. 363pp. doi:10.1149/1.1836438
John, S. (1999) Properties of Si[sub 1−x−y]Ge[sub x]C[sub y] Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition. Journal of the Electrochemical Society, 146. 4611pp. doi:10.1149/1.1392682
Cao, Min (1995) Low Pressure Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Films on SiO[sub 2]. Journal of the Electrochemical Society, 142. 1566pp. doi:10.1149/1.2048614
Shegai, O. A. (2005) Photoconductivity of Si∕Ge∕SiO[sub x] and Si∕Ge∕Si Structures with Germanium Quantum Dots. Physics of the Solid State, 47. 30pp. doi:10.1134/1.1853438
Vostokov, N. V. (2005) Influence of the Germanium Deposition Rate on the Growth and Photoluminescence of Ge(Si)∕Si(001) Self-Assembled Islands. Physics of the Solid State, 47. 38pp. doi:10.1134/1.1853440
Anshukova, N. V. (2005) Thermal Expansion of (Sr[sub 1 – ][sub x]La[sub x])[sub 3]Ru[sub 2]O[sub 7] Single Crystals at Low Temperatures. Physics of the Solid State, 47. 1595pp. doi:10.1134/1.2045339
Fujinaga, Kiyohisa (1993) Characteristics of B-doped Si[sub 1−x]Ge[sub x] Growth Rates by Chemical Vapor Deposition Using Si[sub 2]H[sub 6], GeH[sub 4], and B[sub 2]H[sub 6] Gases. Journal of the Electrochemical Society, 140. 2081pp. doi:10.1149/1.2220768
 
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