Miyazawa, Tetsuya, Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Ji, Shi-yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu (2015) Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors. Journal of Applied Physics, 118 (8). 85702pp. doi:10.1063/1.4929456
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors | ||
| Journal | Journal of Applied Physics | ||
| Authors | Miyazawa, Tetsuya | Author | |
| Nakayama, Koji | Author | ||
| Tanaka, Atsushi | Author | ||
| Asano, Katsunori | Author | ||
| Ji, Shi-yang | Author | ||
| Kojima, Kazutoshi | Author | ||
| Ishida, Yuuki | Author | ||
| Tsuchida, Hidekazu | Author | ||
| Year | 2015 (August 28) | Volume | 118 |
| Issue | 8 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4929456Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5203763 | Long-form Identifier | mindat:1:5:5203763:6 |
| GUID | 0 | ||
| Full Reference | Miyazawa, Tetsuya, Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Ji, Shi-yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu (2015) Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors. Journal of Applied Physics, 118 (8). 85702pp. doi:10.1063/1.4929456 | ||
| Plain Text | Miyazawa, Tetsuya, Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Ji, Shi-yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu (2015) Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors. Journal of Applied Physics, 118 (8). 85702pp. doi:10.1063/1.4929456 | ||
| In | (2015, August) Journal of Applied Physics Vol. 118 (8) AIP Publishing | ||
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