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Nakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu (2011) SiC Zener Diode for Gate Protection of 4.5 kV SiCGT. Materials Science Forum, 679. 559-562 doi:10.4028/www.scientific.net/msf.679-680.559

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Reference TypeJournal (article/letter/editorial)
TitleSiC Zener Diode for Gate Protection of 4.5 kV SiCGT
JournalMaterials Science Forum
AuthorsNakayama, KojiAuthor
Ishii, RyosukeAuthor
Asano, KatsunoriAuthor
Miyazawa, TetsuyaAuthor
Tsuchida, HidekazuAuthor
Year2011 (March)Volume679
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.679-680.559Search in ResearchGate
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Mindat Ref. ID9873279Long-form Identifiermindat:1:5:9873279:3
GUID0
Full ReferenceNakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu (2011) SiC Zener Diode for Gate Protection of 4.5 kV SiCGT. Materials Science Forum, 679. 559-562 doi:10.4028/www.scientific.net/msf.679-680.559
Plain TextNakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu (2011) SiC Zener Diode for Gate Protection of 4.5 kV SiCGT. Materials Science Forum, 679. 559-562 doi:10.4028/www.scientific.net/msf.679-680.559
In(2011) Materials Science Forum Vol. 679. Trans Tech Publications, Ltd.

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Nakayama, Koji, Sugawara, Yoshitaka, Tsuchida, Hidekazu, Miyanagi, Toshiyuki, Kamata, Isaho, Nakamura, Tomonori, Asano, Katsunori, Ishii, R. (2005) 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation. Materials Science Forum, 483. 969-972 doi:10.4028/www.scientific.net/msf.483-485.969
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