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Nakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu (2011) Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode. Materials Science Forum, 679. 535-538 doi:10.4028/www.scientific.net/msf.679-680.535

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Reference TypeJournal (article/letter/editorial)
TitleComponent Technologies for Ultra-High-Voltage 4H-SiC pin Diode
JournalMaterials Science Forum
AuthorsNakayama, KojiAuthor
Ishii, RyosukeAuthor
Asano, KatsunoriAuthor
Miyazawa, TetsuyaAuthor
Ito, MasahikoAuthor
Tsuchida, HidekazuAuthor
Year2011 (March)Volume679
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.679-680.535Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9873272Long-form Identifiermindat:1:5:9873272:0
GUID0
Full ReferenceNakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu (2011) Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode. Materials Science Forum, 679. 535-538 doi:10.4028/www.scientific.net/msf.679-680.535
Plain TextNakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu (2011) Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode. Materials Science Forum, 679. 535-538 doi:10.4028/www.scientific.net/msf.679-680.535
In(2011) Materials Science Forum Vol. 679. Trans Tech Publications, Ltd.

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Nakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu (2011) SiC Zener Diode for Gate Protection of 4.5 kV SiCGT. Materials Science Forum, 679. 559-562 doi:10.4028/www.scientific.net/msf.679-680.559
Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu (2012) Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation. Materials Science Forum, 717. 989-992 doi:10.4028/www.scientific.net/msf.717-720.989
Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu (2011) Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers. Materials Science Forum, 679. 197-200 doi:10.4028/www.scientific.net/msf.679-680.197
Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu (2013) Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime. Materials Science Forum, 740. 903-906 doi:10.4028/www.scientific.net/msf.740-742.903
Nakayama, Koji, Sugawara, Yoshitaka, Tsuchida, Hidekazu, Miyanagi, Toshiyuki, Kamata, Isaho, Nakamura, Tomonori, Asano, Katsunori, Ishii, R. (2005) 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation. Materials Science Forum, 483. 969-972 doi:10.4028/www.scientific.net/msf.483-485.969
Miyazawa, Tetsuya, Nakayama, Koji, Tanaka, Atsushi, Asano, Katsunori, Ji, Shi Yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu (2015) Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs. Materials Science Forum, 821. 851-854 doi:10.4028/www.scientific.net/msf.821-823.851
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Asano, Katsunori, Tanaka, Atsushi, Ogata, Shuuji, Nakayama, Koji, Miyanagi, Yoichi (2012) Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode. Materials Science Forum, 717. 965-968 doi:10.4028/www.scientific.net/msf.717-720.965
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