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Nakayama, Koji, Hemmi, Tetsuro, Asano, Katsunori (2013) Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer. Materials Science Forum, 740. 1107-1110 doi:10.4028/www.scientific.net/msf.740-742.1107

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
JournalMaterials Science Forum
AuthorsNakayama, KojiAuthor
Hemmi, TetsuroAuthor
Asano, KatsunoriAuthor
Year2013 (January)Volume740
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.740-742.1107Search in ResearchGate
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Mindat Ref. ID9877971Long-form Identifiermindat:1:5:9877971:2
GUID0
Full ReferenceNakayama, Koji, Hemmi, Tetsuro, Asano, Katsunori (2013) Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer. Materials Science Forum, 740. 1107-1110 doi:10.4028/www.scientific.net/msf.740-742.1107
Plain TextNakayama, Koji, Hemmi, Tetsuro, Asano, Katsunori (2013) Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer. Materials Science Forum, 740. 1107-1110 doi:10.4028/www.scientific.net/msf.740-742.1107
In(2013) Materials Science Forum Vol. 740. Trans Tech Publications, Ltd.

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