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Ji, Shi Yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu, Yoshida, Sadafumi, Okumura, Hajime (2013) Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 740. 181-184 doi:10.4028/www.scientific.net/msf.740-742.181

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Reference TypeJournal (article/letter/editorial)
TitleLow Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
JournalMaterials Science Forum
AuthorsJi, Shi YangAuthor
Kojima, KazutoshiAuthor
Ishida, YuukiAuthor
Tsuchida, HidekazuAuthor
Yoshida, SadafumiAuthor
Okumura, HajimeAuthor
Year2013 (January)Volume740
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.740-742.181Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9877993Long-form Identifiermindat:1:5:9877993:4
GUID0
Full ReferenceJi, Shi Yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu, Yoshida, Sadafumi, Okumura, Hajime (2013) Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 740. 181-184 doi:10.4028/www.scientific.net/msf.740-742.181
Plain TextJi, Shi Yang, Kojima, Kazutoshi, Ishida, Yuuki, Tsuchida, Hidekazu, Yoshida, Sadafumi, Okumura, Hajime (2013) Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 740. 181-184 doi:10.4028/www.scientific.net/msf.740-742.181
In(2013) Materials Science Forum Vol. 740. Trans Tech Publications, Ltd.

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