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Takahashi, Tetsuo, Ishida, Yuuki, Tsuchida, Hidekazu, Kamata, Isaho, Okumura, Hajime, Yoshida, Sadafumi, Arai, Kazuo (2002) Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films. Materials Science Forum, 389. 323-326 doi:10.4028/www.scientific.net/msf.389-393.323

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Reference TypeJournal (article/letter/editorial)
TitleComparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
JournalMaterials Science Forum
AuthorsTakahashi, TetsuoAuthor
Ishida, YuukiAuthor
Tsuchida, HidekazuAuthor
Kamata, IsahoAuthor
Okumura, HajimeAuthor
Yoshida, SadafumiAuthor
Arai, KazuoAuthor
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.323Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9851817Long-form Identifiermindat:1:5:9851817:5
GUID0
Full ReferenceTakahashi, Tetsuo, Ishida, Yuuki, Tsuchida, Hidekazu, Kamata, Isaho, Okumura, Hajime, Yoshida, Sadafumi, Arai, Kazuo (2002) Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films. Materials Science Forum, 389. 323-326 doi:10.4028/www.scientific.net/msf.389-393.323
Plain TextTakahashi, Tetsuo, Ishida, Yuuki, Tsuchida, Hidekazu, Kamata, Isaho, Okumura, Hajime, Yoshida, Sadafumi, Arai, Kazuo (2002) Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films. Materials Science Forum, 389. 323-326 doi:10.4028/www.scientific.net/msf.389-393.323
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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Ishida, Yuuki, Kushibe, Mitsuhiro, Takahashi, Tetsuo, Okumura, Hajime, Yoshida, Sadafumi (2002) Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers. Materials Science Forum, 389. 459-462 doi:10.4028/www.scientific.net/msf.389-393.459
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Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Jikimoto, Tamotsu, Tsuchida, Hidekazu, Yoshikawa, Masahito, Tomioka, Yuichi, Midorikawa, M., Hijikata, Yasuto, Yoshida, Sadafumi (2002) The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements. Materials Science Forum, 389. 1013-1016 doi:10.4028/www.scientific.net/msf.389-393.1013
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Takahashi, Tetsuo, Ishida, Yuuki, Okumura, Hajime, Yoshida, Sadafumi, Sekigawa, Toshihiro (1998) Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates. Materials Science Forum, 264. 207-210 doi:10.4028/www.scientific.net/msf.264-268.207
Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Yoshida, Sadafumi, Sekigawa, Toshihiro (1998) CVD Growth Mechanism of 3C-SiC on Si Substrates. Materials Science Forum, 264. 183-186 doi:10.4028/www.scientific.net/msf.264-268.183
Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Sekigawa, Toshihiro, Yoshida, Sadafumi (2000) Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition. Materials Science Forum, 338. 1235-1238 doi:10.4028/www.scientific.net/msf.338-342.1235
Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Arai, Kazuo, Yoshida, Sadafumi (2010) Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces. Materials Science Forum, 645. 543-546 doi:10.4028/www.scientific.net/msf.645-648.543
Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Arai, Kazuo, Kimura, K., Nakamura, K., Yoshida, Sadafumi (2006) Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena. Materials Science Forum, 527. 211-214 doi:10.4028/www.scientific.net/msf.527-529.211
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