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Nishio, Johji, Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo (2002) Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 389. 215-218 doi:10.4028/www.scientific.net/msf.389-393.215

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
JournalMaterials Science Forum
AuthorsNishio, JohjiAuthor
Kushibe, MitsuhiroAuthor
Masahara, KohAuthor
Kojima, KazutoshiAuthor
Ohno, ToshiyukiAuthor
Ishida, YuukiAuthor
Takahashi, TetsuoAuthor
Suzuki, TakayaAuthor
Tanaka, TomoyukiAuthor
Yoshida, SadafumiAuthor
Arai, KazuoAuthor
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.215Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9851787Long-form Identifiermindat:1:5:9851787:5
GUID0
Full ReferenceNishio, Johji, Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo (2002) Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 389. 215-218 doi:10.4028/www.scientific.net/msf.389-393.215
Plain TextNishio, Johji, Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadafumi, Arai, Kazuo (2002) Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 389. 215-218 doi:10.4028/www.scientific.net/msf.389-393.215
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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