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Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K. (1991) Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. Journal of Crystal Growth, 115 (1). 628-633 doi:10.1016/0022-0248(91)90816-n

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Reference TypeJournal (article/letter/editorial)
TitleGrowth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
JournalJournal of Crystal Growth
AuthorsHiramatsu, K.Author
Itoh, S.Author
Amano, H.Author
Akasaki, I.Author
Kuwano, N.Author
Shiraishi, T.Author
Oki, K.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90816-nSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2804241Long-form Identifiermindat:1:5:2804241:1
GUID0
Full ReferenceHiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K. (1991) Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. Journal of Crystal Growth, 115 (1). 628-633 doi:10.1016/0022-0248(91)90816-n
Plain TextHiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K. (1991) Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. Journal of Crystal Growth, 115 (1). 628-633 doi:10.1016/0022-0248(91)90816-n
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

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Kuwano, Noriyuki, Shiraishi, Tadayoshi, Koga, Akihiro, Oki, Kensuke, Hiramatsu, Kazumasa, Amano, Hiroshi, Itoh, Kenji, Akasaki, Isamu (1991) Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN. Journal of Crystal Growth, 115 (1). 381-387 doi:10.1016/0022-0248(91)90772-w
Koide, N., Kato, H., Sassa, M., Yamasaki, S., Manabe, K., Hashimoto, M., Amano, H., Hiramatsu, K., Akasaki, I. (1991) Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE. Journal of Crystal Growth, 115 (1). 639-642 doi:10.1016/0022-0248(91)90818-p
Detchprohm, T., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. Journal of Crystal Growth, 128 (1). 384-390 doi:10.1016/0022-0248(93)90353-x
Amano, H., Hiramatsu, K., Kito, M., Sawaki, N., Akasaki, I. (1988) Zn related electroluminescent properties in MOVPE grown GaN. Journal of Crystal Growth, 93 (1). 79-82 doi:10.1016/0022-0248(88)90509-x
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu, Kato, Hisaki, Koide, Norikatsu, Manabe, Katsuhide (1991) MOVPE growth of GaN on a misoriented sapphire substrate. Journal of Crystal Growth, 107 (1). 509-512 doi:10.1016/0022-0248(91)90512-4
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu (1990) Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3. Journal of Crystal Growth, 99 (1). 375-380 doi:10.1016/0022-0248(90)90547-x
Akasaki, Isamu, Amano, Hiroshi, Koide, Yasuo, Hiramatsu, Kazumasa, Sawaki, Nobuhiko (1989) Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE. Journal of Crystal Growth, 98 (1). 209-219 doi:10.1016/0022-0248(89)90200-5
Watanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. Journal of Crystal Growth, 128 (1). 391-396 doi:10.1016/0022-0248(93)90354-y
Takeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o
Murakami, Hiroshi, Asahi, Tsunemori, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 115 (1). 648-651 doi:10.1016/0022-0248(91)90820-u
Kadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
 
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