登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Watanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. Journal of Crystal Growth, 128 (1). 391-396 doi:10.1016/0022-0248(93)90354-y

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleThe growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
JournalJournal of Crystal Growth
AuthorsWatanabe, A.Author
Takeuchi, T.Author
Hirosawa, K.Author
Amano, H.Author
Hiramatsu, K.Author
Akasaki, I.Author
Year1993 (March)Volume128
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(93)90354-ySearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2811705Long-form Identifiermindat:1:5:2811705:2
GUID0
Full ReferenceWatanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. Journal of Crystal Growth, 128 (1). 391-396 doi:10.1016/0022-0248(93)90354-y
Plain TextWatanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. Journal of Crystal Growth, 128 (1). 391-396 doi:10.1016/0022-0248(93)90354-y
In(1993, March) Journal of Crystal Growth Vol. 128 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Detchprohm, T., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. Journal of Crystal Growth, 128 (1). 384-390 doi:10.1016/0022-0248(93)90353-x
Takeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o
Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K. (1991) Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. Journal of Crystal Growth, 115 (1). 628-633 doi:10.1016/0022-0248(91)90816-n
Naniwae, Kouichi, Itoh, Shigetoshi, Amano, Hiroshi, Itoh, Kenji, Hiramatsu, Kazumasa, Akasaki, Isamu (1990) Growth of single crystal GaN substrate using hydride vapor phase epitaxy. Journal of Crystal Growth, 99 (1). 381-384 doi:10.1016/0022-0248(90)90548-y
Akasaki, I., Amano, H., Murakami, H., Sassa, M., Kato, H., Manabe, K. (1993) Growth of GaN and AlGaN for UV/blue p-n junction diodes. Journal of Crystal Growth, 128 (1). 379-383 doi:10.1016/0022-0248(93)90352-w
Amano, H., Hiramatsu, K., Kito, M., Sawaki, N., Akasaki, I. (1988) Zn related electroluminescent properties in MOVPE grown GaN. Journal of Crystal Growth, 93 (1). 79-82 doi:10.1016/0022-0248(88)90509-x
Koide, N., Kato, H., Sassa, M., Yamasaki, S., Manabe, K., Hashimoto, M., Amano, H., Hiramatsu, K., Akasaki, I. (1991) Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE. Journal of Crystal Growth, 115 (1). 639-642 doi:10.1016/0022-0248(91)90818-p
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu, Kato, Hisaki, Koide, Norikatsu, Manabe, Katsuhide (1991) MOVPE growth of GaN on a misoriented sapphire substrate. Journal of Crystal Growth, 107 (1). 509-512 doi:10.1016/0022-0248(91)90512-4
Mitsunari, T., Lee, H.J., Honda, Y., Amano, H. (2015) Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer. Journal of Crystal Growth, 431. 60-63 doi:10.1016/j.jcrysgro.2015.08.027
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu (1990) Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3. Journal of Crystal Growth, 99 (1). 375-380 doi:10.1016/0022-0248(90)90547-x
Yanagase, M., Tanaka, S., Hiramatsu, K., Akasaki, I. (1993) Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy. Journal of Crystal Growth, 128 (1). 562-566 doi:10.1016/0022-0248(93)90386-b
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.6 07:19:23
Go to top of page