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Takeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
JournalJournal of Crystal Growth
AuthorsTakeuchi, TetsuyaAuthor
Amano, HiroshiAuthor
Hiramatsu, KazumasaAuthor
Sawaki, NobuhikoAuthor
Akasaki, IsamuAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90817-oSearch in ResearchGate
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Mindat Ref. ID2804247Long-form Identifiermindat:1:5:2804247:5
GUID0
Full ReferenceTakeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o
Plain TextTakeuchi, Tetsuya, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer. Journal of Crystal Growth, 115 (1). 634-638 doi:10.1016/0022-0248(91)90817-o
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

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Murakami, Hiroshi, Asahi, Tsunemori, Amano, Hiroshi, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Akasaki, Isamu (1991) Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 115 (1). 648-651 doi:10.1016/0022-0248(91)90820-u
Watanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. Journal of Crystal Growth, 128 (1). 391-396 doi:10.1016/0022-0248(93)90354-y
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu, Kato, Hisaki, Koide, Norikatsu, Manabe, Katsuhide (1991) MOVPE growth of GaN on a misoriented sapphire substrate. Journal of Crystal Growth, 107 (1). 509-512 doi:10.1016/0022-0248(91)90512-4
Naniwae, Kouichi, Itoh, Shigetoshi, Amano, Hiroshi, Itoh, Kenji, Hiramatsu, Kazumasa, Akasaki, Isamu (1990) Growth of single crystal GaN substrate using hydride vapor phase epitaxy. Journal of Crystal Growth, 99 (1). 381-384 doi:10.1016/0022-0248(90)90548-y
Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu (1990) Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3. Journal of Crystal Growth, 99 (1). 375-380 doi:10.1016/0022-0248(90)90547-x
Akasaki, Isamu, Amano, Hiroshi, Koide, Yasuo, Hiramatsu, Kazumasa, Sawaki, Nobuhiko (1989) Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE. Journal of Crystal Growth, 98 (1). 209-219 doi:10.1016/0022-0248(89)90200-5
Kuwano, Noriyuki, Shiraishi, Tadayoshi, Koga, Akihiro, Oki, Kensuke, Hiramatsu, Kazumasa, Amano, Hiroshi, Itoh, Kenji, Akasaki, Isamu (1991) Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN. Journal of Crystal Growth, 115 (1). 381-387 doi:10.1016/0022-0248(91)90772-w
Ito, Kenji, Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu (1990) Preparation of AlxGa1-xN/GaN heterostructure by MOVPE. Journal of Crystal Growth, 104 (2). 533-538 doi:10.1016/0022-0248(90)90156-f
Detchprohm, T., Amano, H., Hiramatsu, K., Akasaki, I. (1993) The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. Journal of Crystal Growth, 128 (1). 384-390 doi:10.1016/0022-0248(93)90353-x
Tanaka, Shigeyasu, Hiramatsu, Kazumasa, Habu, Yoshio, Sawaki, Nobuhiko, Akasaki, Isamu (1986) The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility. Journal of Crystal Growth, 79 (1). 978-983 doi:10.1016/0022-0248(86)90582-8
Yanagase, Masashi, Tanaka, Shigeyasu, Hiramatsu, Kazumasa, Akasaki, Isamu (1991) Growth of InGaP epitaxial layers by liquid phase electro-epitaxy. Journal of Crystal Growth, 115 (1). 304-308 doi:10.1016/0022-0248(91)90758-w
 
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