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Kadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k

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Reference TypeJournal (article/letter/editorial)
TitleStudy of initial buffer layer in GaAs-on-Si growth
JournalJournal of Crystal Growth
AuthorsKadoiwa, K.Author
Nishimura, T.Author
Hayafuji, N.Author
Miyashita, M.Author
Kizuki, H.Author
Mizuguchi, K.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90725-kSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2803701Long-form Identifiermindat:1:5:2803701:1
GUID0
Full ReferenceKadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
Plain TextKadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

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Nishimura, T., Kadoiwa, K., Hayafuji, N., Miyashita, M., Mitsui, K., Kumabe, H., Murotani, T. (1991) Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si. Journal of Crystal Growth, 107 (1). 468-472 doi:10.1016/0022-0248(91)90504-x
Nishimura, T., Kadoiwa, K., Miyashita, M., Kumabe, H., Murotani, T. (1991) Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system. Journal of Crystal Growth, 112 (4). 791-796 doi:10.1016/0022-0248(91)90136-s
Fujita, K., Shiba, Y., Asai, K. (1991) MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer. Journal of Crystal Growth, 107 (1). 473-478 doi:10.1016/0022-0248(91)90505-y
Mizuguchi, K., Hayafuji, N., Ochi, S., Murotani, T., Fujikawa, K. (1986) MOCVD GaAs growth on Ge (100) and Si (100) substrates. Journal of Crystal Growth, 77 (1). 509-514 doi:10.1016/0022-0248(86)90345-3
Hayafuji, Norio, Miyashita, Motoharu, Kumabe, Hisao, Murotani, Toshio (1990) Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers. Journal of Crystal Growth, 106 (2). 421-425 doi:10.1016/0022-0248(90)90088-3
Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K. (1991) Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. Journal of Crystal Growth, 115 (1). 628-633 doi:10.1016/0022-0248(91)90816-n
Crook, G.E., Tapfer, L., Däweritz, L., Cingolani, R., Ploog, K. (1991) Control of initial surface configuration for GaAs-on-Si MBE using a Si buffer layer?. Journal of Crystal Growth, 111 (1). 184-188 doi:10.1016/0022-0248(91)90968-b
Katahama, H., Matsuda, Y., Shiba, Y., Fujita, K. (1991) Raman scattering study on the first step growth of GaAs on Si grown by MOCVD. Journal of Crystal Growth, 115 (1). 141-144 doi:10.1016/0022-0248(91)90727-m
Hayafuji, N., Mizuguchi, K., Ochi, S., Murotani, T. (1986) Highly uniform growth of GaAs and AlGaAs by large-capacity MOCVD reactor. Journal of Crystal Growth, 77 (1). 281-285 doi:10.1016/0022-0248(86)90312-x
Uen, W.Y., Sakawa, S., Nishinaga, T. (1991) Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si. Journal of Crystal Growth, 115 (1). 122-127 doi:10.1016/0022-0248(91)90724-j
Hayafuji, N., Ochi, S., Miyashita, M., Tsugami, M., Murotani, T., Kawagishi, A. (1988) Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si. Journal of Crystal Growth, 93 (1). 494-498 doi:10.1016/0022-0248(88)90572-6
 
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