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Karadeniz, S., Tuğluoğlu, N., Serin, T., Serin, N. (2005) The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method. Applied Surface Science, 246. 30-35 doi:10.1016/j.apsusc.2004.11.022

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Reference TypeJournal (article/letter/editorial)
TitleThe energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method
JournalApplied Surface Science
AuthorsKaradeniz, S.Author
Tuğluoğlu, N.Author
Serin, T.Author
Serin, N.Author
Year2005 (June)Volume246
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2004.11.022Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9907459Long-form Identifiermindat:1:5:9907459:9
GUID0
Full ReferenceKaradeniz, S., Tuğluoğlu, N., Serin, T., Serin, N. (2005) The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method. Applied Surface Science, 246. 30-35 doi:10.1016/j.apsusc.2004.11.022
Plain TextKaradeniz, S., Tuğluoğlu, N., Serin, T., Serin, N. (2005) The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method. Applied Surface Science, 246. 30-35 doi:10.1016/j.apsusc.2004.11.022
In(n.d.) Applied Surface Science Vol. 246. Elsevier BV

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Karadeniz, S, Tuğluoğlu, N, Serin, T (2004) Substrate temperature dependence of series resistance in Al/SnO2/p-Si (111) Schottky diodes prepared by spray deposition method. Applied Surface Science, 233. 5-13 doi:10.1016/j.apsusc.2004.03.216
Serin, T., Serin, N., Karadeniz, S., Sarı, H., Tuğluoğlu, N., Pakma, O. (2006) Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis. Journal of Non-Crystalline Solids, 352 (3) 209-215 doi:10.1016/j.jnoncrysol.2005.11.031
Serin, T, Gürakar, S, Serin, N, Yıldırım, N, Özyurt Kuş, F (2009) Current flow mechanism in Cu2O/p-Si heterojunction prepared by chemical method. Journal of Physics D: Applied Physics, 42. 225108pp. doi:10.1088/0022-3727/42/22/225108
Pakma, O., Serin, N., Serin, T., Altındal, Ş. (2008) The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures. Journal of Applied Physics, 104 (1). 14501pp. doi:10.1063/1.2952028
Pakma, O., Serin, N., Serin, T., Altındal, Ş. (2011) On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures. Physica B: Condensed Matter, 406 (4). 771-776 doi:10.1016/j.physb.2010.11.078
Tuğluoğlu, N., Yakuphanoglu, F., Karadeniz, S. (2007) Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics. Physica B: Condensed Matter, 393 (1). 56-60 doi:10.1016/j.physb.2006.12.035
Yildiz, A., Horzum, Ş., Serin, N., Serin, T. (2014) Hopping conduction in In-doped CuO thin films. Applied Surface Science, 318. 105-107 doi:10.1016/j.apsusc.2014.01.118
Tuğluoğlu, N., Karadeniz, S., Altındal, Ş. (2005) Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer. Applied Surface Science, 239. 481-489 doi:10.1016/j.apsusc.2004.06.015
Karadeniz, S., Selçuk, A. Birkan, Tuğluoğlu, N., Ocak, S. Bilge (2007) On the interface trap density and series resistance of tin oxide film prepared on n-type Si (111) substrate: Frequency dependent effects before and after 60Co γ-ray irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 259 (2). 889-894 doi:10.1016/j.nimb.2007.02.085
Serin, T., Gurakar, S., Ot, Hakan, Yildiz, Abdullah, Serin, Necmi (2015) Influence of oxygen flow rate in CuO. Applied Surface Science, 352. 155-157 doi:10.1016/j.apsusc.2015.01.095
Tuğluoğlu, N, Karadeniz, S, Şahin, M, Şafak, H (2004) Temperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes. Applied Surface Science, 233. 320-327 doi:10.1016/j.apsusc.2004.03.238
 
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