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Tuğluoğlu, N., Yakuphanoglu, F., Karadeniz, S. (2007) Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics. Physica B: Condensed Matter, 393 (1). 56-60 doi:10.1016/j.physb.2006.12.035

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics
JournalPhysica B: Condensed Matter
AuthorsTuğluoğlu, N.Author
Yakuphanoglu, F.Author
Karadeniz, S.Author
Year2007 (April)Volume393
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.physb.2006.12.035Search in ResearchGate
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Mindat Ref. ID4064241Long-form Identifiermindat:1:5:4064241:7
GUID0
Full ReferenceTuğluoğlu, N., Yakuphanoglu, F., Karadeniz, S. (2007) Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics. Physica B: Condensed Matter, 393 (1). 56-60 doi:10.1016/j.physb.2006.12.035
Plain TextTuğluoğlu, N., Yakuphanoglu, F., Karadeniz, S. (2007) Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics. Physica B: Condensed Matter, 393 (1). 56-60 doi:10.1016/j.physb.2006.12.035
In(2007, April) Physica B: Condensed Matter Vol. 393 (1) Elsevier BV

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