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Tuğluoğlu, N, Karadeniz, S, Şahin, M, Şafak, H (2004) Temperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes. Applied Surface Science, 233. 320-327 doi:10.1016/j.apsusc.2004.03.238

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes
JournalApplied Surface Science
AuthorsTuğluoğlu, NAuthor
Karadeniz, SAuthor
Şahin, MAuthor
Şafak, HAuthor
Year2004 (June)Volume233
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2004.03.238Search in ResearchGate
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Mindat Ref. ID9906409Long-form Identifiermindat:1:5:9906409:7
GUID0
Full ReferenceTuğluoğlu, N, Karadeniz, S, Şahin, M, Şafak, H (2004) Temperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes. Applied Surface Science, 233. 320-327 doi:10.1016/j.apsusc.2004.03.238
Plain TextTuğluoğlu, N, Karadeniz, S, Şahin, M, Şafak, H (2004) Temperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes. Applied Surface Science, 233. 320-327 doi:10.1016/j.apsusc.2004.03.238
In(n.d.) Applied Surface Science Vol. 233. Elsevier BV

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Karadeniz, S, Tuğluoğlu, N, Serin, T (2004) Substrate temperature dependence of series resistance in Al/SnO2/p-Si (111) Schottky diodes prepared by spray deposition method. Applied Surface Science, 233. 5-13 doi:10.1016/j.apsusc.2004.03.216
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Yüksel, Ö. F., Kuş, M., Şimşir, N., Şafak, H., Şahin, M., Yenel, E. (2011) A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range. Journal of Applied Physics, 110 (2). 24507pp. doi:10.1063/1.3610394
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Coskun, Cevdet, Biber, Mehmet, Efeoglu, Hasan (2003) Temperature dependence of current–voltage characteristics of Sn/p-GaTe Schottky diodes. Applied Surface Science, 211. 360-366 doi:10.1016/s0169-4332(03)00267-8
Çınar, K., Yıldırım, N., Coşkun, C., Turut, A. (2009) Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes. Journal of Applied Physics, 106 (7). 73717pp. doi:10.1063/1.3236647
Tuğluoğlu, N., Karadeniz, S., Altındal, Ş. (2005) Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer. Applied Surface Science, 239. 481-489 doi:10.1016/j.apsusc.2004.06.015
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Osvald, J, Horváth, Zs.J (2004) Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer. Applied Surface Science, 234. 349-354 doi:10.1016/j.apsusc.2004.05.046
Yüksel, Ö. F., Tuğluoğlu, N., Şafak, H., Kuş, M. (2013) The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide. Journal of Applied Physics, 113 (4). 44507pp. doi:10.1063/1.4789021
 
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