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Brown, G. F., Ager, J. W., Walukiewicz, W., Schaff, W. J., Wu, J. (2008) Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect. Applied Physics Letters, 93 (26). 262105pp. doi:10.1063/1.3062856

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Reference TypeJournal (article/letter/editorial)
TitleProbing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
JournalApplied Physics Letters
AuthorsBrown, G. F.Author
Ager, J. W.Author
Walukiewicz, W.Author
Schaff, W. J.Author
Wu, J.Author
Year2008 (December 29)Volume93
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3062856Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8570396Long-form Identifiermindat:1:5:8570396:8
GUID0
Full ReferenceBrown, G. F., Ager, J. W., Walukiewicz, W., Schaff, W. J., Wu, J. (2008) Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect. Applied Physics Letters, 93 (26). 262105pp. doi:10.1063/1.3062856
Plain TextBrown, G. F., Ager, J. W., Walukiewicz, W., Schaff, W. J., Wu, J. (2008) Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect. Applied Physics Letters, 93 (26). 262105pp. doi:10.1063/1.3062856
In(2008, December) Applied Physics Letters Vol. 93 (26) AIP Publishing

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Pačebutas, V., Aleksejenko, G., Krotkus, A., Ager, J. W., Walukiewicz, W., Lu, Hai, Schaff, William J. (2006) Optical bleaching effect in InN epitaxial layers. Applied Physics Letters, 88 (19). 191109pp. doi:10.1063/1.2202117
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi (2002) Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80 (21). 3967-3969 doi:10.1063/1.1482786
Jones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693
Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Li, S. X., Haller, E. E., Lu, Hai, Schaff, William J. (2003) Temperature dependence of the fundamental band gap of InN. Journal of Applied Physics, 94 (7). 4457-4460 doi:10.1063/1.1605815
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J. (2002) Small band gap bowing in In1−xGaxN alloys. Applied Physics Letters, 80 (25). 4741-4743 doi:10.1063/1.1489481
Yim, J. W. L., Jones, R. E., Yu, K. M., Ager, J. W., Walukiewicz, W., Schaff, William J., Wu, J. (2007) Effects of surface states on electrical characteristics of InN andIn1−xGaxN. Physical Review B, 76 (4) doi:10.1103/physrevb.76.041303
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager, J. W., Wu, J., Shan, W., Lu, Hai, Schaff, William J. (2005) Effect of native defects on optical properties of InxGa1−xN alloys. Applied Physics Letters, 87 (16). 161905pp. doi:10.1063/1.2108118
Ager, J. W., Miller, N., Jones, R. E., Yu, K. M., Wu, J., Schaff, W. J., Walukiewicz, W. (2008) Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements. physica status solidi (b), 245 (5). 873-877 doi:10.1002/pssb.200778731
Miller, N., Ager, J. W., Smith, H. M., Mayer, M. A., Yu, K. M., Haller, E. E., Walukiewicz, W., Schaff, W. J., Gallinat, C., Koblmüller, G., Speck, J. S. (2010) Hole transport and photoluminescence in Mg-doped InN. Journal of Applied Physics, 107 (11). 113712pp. doi:10.1063/1.3427564
Yu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J. (2002) Effects of the narrow band gap on the properties of InN. Physical Review B, 66 (20) doi:10.1103/physrevb.66.201403
 
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