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Yu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513

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Reference TypeJournal (article/letter/editorial)
TitleOn the crystalline structure, stoichiometry and band gap of InN thin films
JournalApplied Physics Letters
AuthorsYu, K. M.Author
Liliental-Weber, Z.Author
Walukiewicz, W.Author
Shan, W.Author
Ager, J. W.Author
Li, S. X.Author
Jones, R. E.Author
Haller, E. E.Author
Lu, HaiAuthor
Schaff, William J.Author
Year2005Volume86
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.1861513Search in ResearchGate
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Mindat Ref. ID8543797Long-form Identifiermindat:1:5:8543797:7
GUID0
Full ReferenceYu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
Plain TextYu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
In(2005) Applied Physics Letters Vol. 86 (7) AIP Publishing

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Li, S. X., Jones, R. E., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager, J. W., Liliental-Weber, Z., Lu, Hai, Schaff, William J. (2006) Photoluminescence of energetic particle-irradiated InxGa1−xN alloys. Applied Physics Letters, 88 (15). 151101pp. doi:10.1063/1.2193799
Jones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693
Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Li, S. X., Haller, E. E., Lu, Hai, Schaff, William J. (2003) Temperature dependence of the fundamental band gap of InN. Journal of Applied Physics, 94 (7). 4457-4460 doi:10.1063/1.1605815
Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J. (2002) Effects of the narrow band gap on the properties of InN. Physical Review B, 66 (20) doi:10.1103/physrevb.66.201403
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi (2002) Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80 (21). 3967-3969 doi:10.1063/1.1482786
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager, J. W., Wu, J., Shan, W., Lu, Hai, Schaff, William J. (2005) Effect of native defects on optical properties of InxGa1−xN alloys. Applied Physics Letters, 87 (16). 161905pp. doi:10.1063/1.2108118
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J. (2002) Small band gap bowing in In1−xGaxN alloys. Applied Physics Letters, 80 (25). 4741-4743 doi:10.1063/1.1489481
Li, S. X., Yu, K. M., Wu, J., Jones, R. E., Walukiewicz, W., Ager, J. W., Shan, W., Haller, E. E., Lu, Hai, Schaff, William J. (2005) Fermi-level stabilization energy in group III nitrides. Physical Review B, 71 (16) doi:10.1103/physrevb.71.161201
Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J. (2006) Evidence forp-Type Doping of InN. Physical Review Letters, 96 (12). doi:10.1103/physrevlett.96.125505
Jones, R. E., Broesler, R., Yu, K. M., Ager, J. W., Haller, E. E., Walukiewicz, W., Chen, X., Schaff, W. J. (2008) Band gap bowing parameter of In1−xAlxN. Journal of Applied Physics, 104 (12). 123501pp. doi:10.1063/1.3039509
Ager, J. W., Jones, R. E., Yamaguchi, D. M., Yu, K. M., Walukiewicz, W., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2007) p-type InN and In-rich InGaN. physica status solidi (b), 244 (6). 1820-1824 doi:10.1002/pssb.200674762
 
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