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Ager, J. W., Jones, R. E., Yamaguchi, D. M., Yu, K. M., Walukiewicz, W., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2007) p-type InN and In-rich InGaN. physica status solidi (b), 244 (6). 1820-1824 doi:10.1002/pssb.200674762

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Reference TypeJournal (article/letter/editorial)
Titlep-type InN and In-rich InGaN
Journalphysica status solidi (b)
AuthorsAger, J. W.Author
Jones, R. E.Author
Yamaguchi, D. M.Author
Yu, K. M.Author
Walukiewicz, W.Author
Li, S. X.Author
Haller, E. E.Author
Lu, H.Author
Schaff, W. J.Author
Year2007 (June)Volume244
Issue6
PublisherWiley
DOIdoi:10.1002/pssb.200674762Search in ResearchGate
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Mindat Ref. ID5029455Long-form Identifiermindat:1:5:5029455:6
GUID0
Full ReferenceAger, J. W., Jones, R. E., Yamaguchi, D. M., Yu, K. M., Walukiewicz, W., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2007) p-type InN and In-rich InGaN. physica status solidi (b), 244 (6). 1820-1824 doi:10.1002/pssb.200674762
Plain TextAger, J. W., Jones, R. E., Yamaguchi, D. M., Yu, K. M., Walukiewicz, W., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2007) p-type InN and In-rich InGaN. physica status solidi (b), 244 (6). 1820-1824 doi:10.1002/pssb.200674762
In(2007, June) physica status solidi (b) Vol. 244 (6) Wiley

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Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J. (2006) Evidence forp-Type Doping of InN. Physical Review Letters, 96 (12). doi:10.1103/physrevlett.96.125505
Ager, J. W., Miller, N., Jones, R. E., Yu, K. M., Wu, J., Schaff, W. J., Walukiewicz, W. (2008) Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements. physica status solidi (b), 245 (5). 873-877 doi:10.1002/pssb.200778731
Jones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693
Wu, J., Walukiewicz, W., Yu, K. M., Ager III, J. W., Haller, E. E., Lu, Hai, Schaff, William J. (2003) Narrow bandgap group III-nitride alloys. physica status solidi (b), 240 (2). 412-416 doi:10.1002/pssb.200303475
Yu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
Li, S. X., Yu, K. M., Wu, J., Jones, R. E., Walukiewicz, W., Ager, J. W., Shan, W., Haller, E. E., Lu, Hai, Schaff, William J. (2005) Fermi-level stabilization energy in group III nitrides. Physical Review B, 71 (16) doi:10.1103/physrevb.71.161201
Jones, R E, Li, S X, Yu, K M, Ager, J W, Haller, E E, Walukiewicz, W, Lu, H, Schaff, W J (2009) Properties of native point defects in In1−xAlxN alloys. Journal of Physics D: Applied Physics, 42. 95406pp. doi:10.1088/0022-3727/42/9/095406
Ager, J. W., Walukiewicz, W., Shan, W., Yu, K. M., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2005) Multiphonon resonance Raman scattering inInxGa1−xN. Physical Review B, 72 (15) doi:10.1103/physrevb.72.155204
Li, S. X., Wu, J., Walukiewicz, W., Shan, W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi (2004) Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys. physica status solidi (b), 241 (14). 3107-3112 doi:10.1002/pssb.200405232
Miller, N., Jones, R. E., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Haller, E. E., Walukiewicz, W., Williamson, T. L., Hoffbauer, M. A. (2008) Low-temperature grown compositionally graded InGaN films. physica status solidi (c), 5 (6). 1866-1869 doi:10.1002/pssc.200778719
Shan, W., Walukiewicz, W., Ager III, J. W., Yu, K. M., Wu, J., Haller, E. E., Nabetani, Y. (2004) Oxygen induced band-gap reduction in ZnOxSe1−x alloys. physica status solidi (b), 241 (3). 603-606 doi:10.1002/pssb.200304168
 
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