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Jones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693

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Reference TypeJournal (article/letter/editorial)
TitleHigh electron mobility InN
JournalApplied Physics Letters
AuthorsJones, R. E.Author
Li, S. X.Author
Haller, E. E.Author
van Genuchten, H. C. M.Author
Yu, K. M.Author
Ager, J. W.Author
Liliental-Weber, Z.Author
Walukiewicz, W.Author
Lu, H.Author
Schaff, W. J.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2722693Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553468Long-form Identifiermindat:1:5:8553468:7
GUID0
Full ReferenceJones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693
Plain TextJones, R. E., Li, S. X., Haller, E. E., van Genuchten, H. C. M., Yu, K. M., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W., Lu, H., Schaff, W. J. (2007) High electron mobility InN. Applied Physics Letters, 90 (16). 162103pp. doi:10.1063/1.2722693
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Yu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
Li, S. X., Jones, R. E., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager, J. W., Liliental-Weber, Z., Lu, Hai, Schaff, William J. (2006) Photoluminescence of energetic particle-irradiated InxGa1−xN alloys. Applied Physics Letters, 88 (15). 151101pp. doi:10.1063/1.2193799
Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J. (2006) Evidence forp-Type Doping of InN. Physical Review Letters, 96 (12). doi:10.1103/physrevlett.96.125505
Ager, J. W., Jones, R. E., Yamaguchi, D. M., Yu, K. M., Walukiewicz, W., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2007) p-type InN and In-rich InGaN. physica status solidi (b), 244 (6). 1820-1824 doi:10.1002/pssb.200674762
Liliental-Weber, Z., Jones, R.E., van Genuchten, H.C.M., Yu, K.M., Walukiewicz, W., Ager, J.W., Haller, E.E., Lu, H., Schaff, W.J. (2007) TEM studies of as-grown, irradiated and annealed InN films. Physica B: Condensed Matter, 401. 646-649 doi:10.1016/j.physb.2007.09.042
Jones, R E, Li, S X, Yu, K M, Ager, J W, Haller, E E, Walukiewicz, W, Lu, H, Schaff, W J (2009) Properties of native point defects in In1−xAlxN alloys. Journal of Physics D: Applied Physics, 42. 95406pp. doi:10.1088/0022-3727/42/9/095406
Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Li, S. X., Haller, E. E., Lu, Hai, Schaff, William J. (2003) Temperature dependence of the fundamental band gap of InN. Journal of Applied Physics, 94 (7). 4457-4460 doi:10.1063/1.1605815
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager, J. W., Wu, J., Shan, W., Lu, Hai, Schaff, William J. (2005) Effect of native defects on optical properties of InxGa1−xN alloys. Applied Physics Letters, 87 (16). 161905pp. doi:10.1063/1.2108118
Jones, R. E., Broesler, R., Yu, K. M., Ager, J. W., Haller, E. E., Walukiewicz, W., Chen, X., Schaff, W. J. (2008) Band gap bowing parameter of In1−xAlxN. Journal of Applied Physics, 104 (12). 123501pp. doi:10.1063/1.3039509
Li, S. X., Yu, K. M., Wu, J., Jones, R. E., Walukiewicz, W., Ager, J. W., Shan, W., Haller, E. E., Lu, Hai, Schaff, William J. (2005) Fermi-level stabilization energy in group III nitrides. Physical Review B, 71 (16) doi:10.1103/physrevb.71.161201
Ager, J. W., Walukiewicz, W., Shan, W., Yu, K. M., Li, S. X., Haller, E. E., Lu, H., Schaff, W. J. (2005) Multiphonon resonance Raman scattering inInxGa1−xN. Physical Review B, 72 (15) doi:10.1103/physrevb.72.155204
 
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