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Baldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040

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Reference TypeJournal (article/letter/editorial)
TitleEffects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition
JournalApplied Physics Letters
AuthorsBaldovino, S.Author
Spiga, S.Author
Scarel, G.Author
Fanciulli, M.Author
Year2007 (October 22)Volume91
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2802040Search in ResearchGate
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Mindat Ref. ID8556822Long-form Identifiermindat:1:5:8556822:2
GUID0
Full ReferenceBaldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040
Plain TextBaldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040
In(2007, October) Applied Physics Letters Vol. 91 (17) AIP Publishing

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Spiga, S., Wiemer, C., Tallarida, G., Scarel, G., Ferrari, S., Seguini, G., Fanciulli, M. (2005) Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge. Applied Physics Letters, 87 (11). 112904pp. doi:10.1063/1.2042631
Ferrari, S., Scarel, G., Wiemer, C., Fanciulli, M. (2002) Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition. Journal of Applied Physics, 92 (12). 7675-7677 doi:10.1063/1.1521802
Wiemer, C., Lamagna, L., Baldovino, S., Perego, M., Schamm-Chardon, S., Coulon, P. E., Salicio, O., Congedo, G., Spiga, S., Fanciulli, M. (2010) Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks. Applied Physics Letters, 96 (18). 182901pp. doi:10.1063/1.3400213
Lu, H. L., Scarel, G., Alia, M., Fanciulli, M., Ding, Shi-Jin, Zhang, David Wei (2008) Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition. Applied Physics Letters, 92 (22). 222907pp. doi:10.1063/1.2938697
Ferrari, S., Scarel, G. (2004) Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100). Journal of Applied Physics, 96 (1). 144-149 doi:10.1063/1.1753080
Lu, H. L., Scarel, G., Wiemer, C., Perego, M., Spiga, S., Fanciulli, M., Pavia, G. (2008) Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors. Journal of the Electrochemical Society, 155. doi:10.1149/1.2965456
Scarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Vibrational and electrical properties of hexagonal La2O3 films. Applied Physics Letters, 91 (10). 102901pp. doi:10.1063/1.2779108
Seguini, G., Perego, M., Spiga, S., Fanciulli, M., Dimoulas, A. (2007) Conduction band offset of HfO2 on GaAs. Applied Physics Letters, 91 (19). 192902pp. doi:10.1063/1.2805811
Scarel, G., Bonera, E., Wiemer, C., Tallarida, G., Spiga, S., Fanciulli, M., Fedushkin, I. L., Schumann, H., Lebedinskii, Yu., Zenkevich, A. (2004) Atomic-layer deposition of Lu2O3. Applied Physics Letters, 85 (4). 630-632 doi:10.1063/1.1773360
Scarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Erratum: “Vibrational and electrical properties of hexagonal La2O3 films” [Appl. Phys. Lett. 91, 102901 (2007)]. Applied Physics Letters, 91 (18). 189901pp. doi:10.1063/1.2811709
Molle, Alessandro, Spiga, Sabina, Fanciulli, Marco (2008) Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition. The Journal of Chemical Physics, 129 (1). 11104pp. doi:10.1063/1.2955446
 
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