Wiemer, C., Lamagna, L., Baldovino, S., Perego, M., Schamm-Chardon, S., Coulon, P. E., Salicio, O., Congedo, G., Spiga, S., Fanciulli, M. (2010) Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks. Applied Physics Letters, 96 (18). 182901pp. doi:10.1063/1.3400213

See Also

These are possibly similar items as determined by title/reference text matching only.

	Lamagna, L., Wiemer, C., Baldovino, S., Molle, A., Perego, M., Schamm-Chardon, S., Coulon, P. E., Fanciulli, M. (2009) Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100). Applied Physics Letters, 95 (12). 122902pp. doi:10.1063/1.3227669
	Lamagna, L., Wiemer, C., Perego, M., Volkos, S. N., Baldovino, S., Tsoutsou, D., Schamm-Chardon, S., Coulon, P. E., Fanciulli, M. (2010) O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates. Journal of Applied Physics, 108 (8). 84108pp. doi:10.1063/1.3499258
	Tsoutsou, D., Lamagna, L., Volkos, S. N., Molle, A., Baldovino, S., Schamm, S., Coulon, P. E., Fanciulli, M. (2009) Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, 94 (5). 53504pp. doi:10.1063/1.3075609
	Lamagna, L., Molle, A., Wiemer, C., Spiga, S., Grazianetti, C., Congedo, G., Fanciulli, M. (2012) Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As. Journal of the Electrochemical Society, 159. doi:10.1149/2.034203jes
	Schamm, S., Coulon, P. E., Miao, S., Volkos, S. N., Lu, L. H., Lamagna, L., Wiemer, C., Tsoutsou, D., Scarel, G., Fanciulli, M. (2009) Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks. Journal of the Electrochemical Society, 156. doi:10.1149/1.3000594
	Baldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040
	Spiga, S., Wiemer, C., Tallarida, G., Scarel, G., Ferrari, S., Seguini, G., Fanciulli, M. (2005) Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge. Applied Physics Letters, 87 (11). 112904pp. doi:10.1063/1.2042631
	Spiga, S., Rao, R., Lamagna, L., Wiemer, C., Congedo, G., Lamperti, A., Molle, A., Fanciulli, M., Palma, F., Irrera, F. (2012) Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode. Journal of Applied Physics, 112 (1). 14107pp. doi:10.1063/1.4731746
	Wiemer, C., Debernardi, A., Lamperti, A., Molle, A., Salicio, O., Lamagna, L., Fanciulli, M. (2011) Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001). Applied Physics Letters, 99 (23). 232907pp. doi:10.1063/1.3666237
	Scarel, G., Bonera, E., Wiemer, C., Tallarida, G., Spiga, S., Fanciulli, M., Fedushkin, I. L., Schumann, H., Lebedinskii, Yu., Zenkevich, A. (2004) Atomic-layer deposition of Lu2O3. Applied Physics Letters, 85 (4). 630-632 doi:10.1063/1.1773360
	Lamperti, A., Lamagna, L., Congedo, G., Spiga, S. (2011) Cubic/Tetragonal Phase Stabilization in High-κ ZrO2 Thin Films Grown Using O3-Based Atomic Layer Deposition. Journal of the Electrochemical Society, 158. doi:10.1149/1.3625254