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Scarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Vibrational and electrical properties of hexagonal La2O3 films. Applied Physics Letters, 91 (10). 102901pp. doi:10.1063/1.2779108

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Reference TypeJournal (article/letter/editorial)
TitleVibrational and electrical properties of hexagonal La2O3 films
JournalApplied Physics Letters
AuthorsScarel, G.Author
Debernardi, A.Author
Tsoutsou, D.Author
Spiga, S.Author
Capelli, S. C.Author
Lamagna, L.Author
Volkos, S. N.Author
Alia, M.Author
Fanciulli, M.Author
Year2007 (September 3)Volume91
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2779108Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8555770Long-form Identifiermindat:1:5:8555770:3
GUID0
Full ReferenceScarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Vibrational and electrical properties of hexagonal La2O3 films. Applied Physics Letters, 91 (10). 102901pp. doi:10.1063/1.2779108
Plain TextScarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Vibrational and electrical properties of hexagonal La2O3 films. Applied Physics Letters, 91 (10). 102901pp. doi:10.1063/1.2779108
In(2007, September) Applied Physics Letters Vol. 91 (10) AIP Publishing

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Scarel, G., Debernardi, A., Tsoutsou, D., Spiga, S., Capelli, S. C., Lamagna, L., Volkos, S. N., Alia, M., Fanciulli, M. (2007) Erratum: “Vibrational and electrical properties of hexagonal La2O3 films” [Appl. Phys. Lett. 91, 102901 (2007)]. Applied Physics Letters, 91 (18). 189901pp. doi:10.1063/1.2811709
Lamagna, L., Wiemer, C., Perego, M., Volkos, S. N., Baldovino, S., Tsoutsou, D., Schamm-Chardon, S., Coulon, P. E., Fanciulli, M. (2010) O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates. Journal of Applied Physics, 108 (8). 84108pp. doi:10.1063/1.3499258
Schamm, S., Coulon, P. E., Miao, S., Volkos, S. N., Lu, L. H., Lamagna, L., Wiemer, C., Tsoutsou, D., Scarel, G., Fanciulli, M. (2009) Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks. Journal of the Electrochemical Society, 156. doi:10.1149/1.3000594
Tsoutsou, D., Lamagna, L., Volkos, S. N., Molle, A., Baldovino, S., Schamm, S., Coulon, P. E., Fanciulli, M. (2009) Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, 94 (5). 53504pp. doi:10.1063/1.3075609
Baldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040
Spiga, S., Wiemer, C., Tallarida, G., Scarel, G., Ferrari, S., Seguini, G., Fanciulli, M. (2005) Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge. Applied Physics Letters, 87 (11). 112904pp. doi:10.1063/1.2042631
Spiga, S., Rao, R., Lamagna, L., Wiemer, C., Congedo, G., Lamperti, A., Molle, A., Fanciulli, M., Palma, F., Irrera, F. (2012) Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode. Journal of Applied Physics, 112 (1). 14107pp. doi:10.1063/1.4731746
Seguini, G., Bonera, E., Spiga, S., Scarel, G., Fanciulli, M. (2004) Energy-band diagram of metal/Lu2O3/silicon structures. Applied Physics Letters, 85 (22). 5316-5318 doi:10.1063/1.1828600
Scarel, G., Bonera, E., Wiemer, C., Tallarida, G., Spiga, S., Fanciulli, M., Fedushkin, I. L., Schumann, H., Lebedinskii, Yu., Zenkevich, A. (2004) Atomic-layer deposition of Lu2O3. Applied Physics Letters, 85 (4). 630-632 doi:10.1063/1.1773360
Seguini, G., Perego, M., Spiga, S., Fanciulli, M., Dimoulas, A. (2007) Conduction band offset of HfO2 on GaAs. Applied Physics Letters, 91 (19). 192902pp. doi:10.1063/1.2805811
Wiemer, C., Lamagna, L., Baldovino, S., Perego, M., Schamm-Chardon, S., Coulon, P. E., Salicio, O., Congedo, G., Spiga, S., Fanciulli, M. (2010) Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks. Applied Physics Letters, 96 (18). 182901pp. doi:10.1063/1.3400213
 
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