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Ma, R. M., Dai, L., Qin, G. G. (2007) Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires. Applied Physics Letters, 90 (9). 93109pp. doi:10.1063/1.2710004

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires
JournalApplied Physics Letters
AuthorsMa, R. M.Author
Dai, L.Author
Qin, G. G.Author
Year2007 (February 26)Volume90
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2710004Search in ResearchGate
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Mindat Ref. ID8555597Long-form Identifiermindat:1:5:8555597:2
GUID0
Full ReferenceMa, R. M., Dai, L., Qin, G. G. (2007) Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires. Applied Physics Letters, 90 (9). 93109pp. doi:10.1063/1.2710004
Plain TextMa, R. M., Dai, L., Qin, G. G. (2007) Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires. Applied Physics Letters, 90 (9). 93109pp. doi:10.1063/1.2710004
In(2007, February) Applied Physics Letters Vol. 90 (9) AIP Publishing

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