| Reference Type | Journal (article/letter/editorial) |
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| Title | Back-gate ZnO nanowire field-effect transistors each with a top Ω shaped Au contact |
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| Journal | Applied Physics Letters |
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| Authors | Yang, W. Q. | Author |
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| Dai, L. | Author |
| Ma, R. M. | Author |
| Liu, C. | Author |
| Sun, T. | Author |
| Qin, G. G. | Author |
| Year | 2008 (July 21) | Volume | 93 |
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| Issue | 3 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.2959075Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 8570507 | Long-form Identifier | mindat:1:5:8570507:2 |
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|
| GUID | 0 |
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| Full Reference | Yang, W. Q., Dai, L., Ma, R. M., Liu, C., Sun, T., Qin, G. G. (2008) Back-gate ZnO nanowire field-effect transistors each with a top Ω shaped Au contact. Applied Physics Letters, 93 (3). 33102pp. doi:10.1063/1.2959075 |
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| Plain Text | Yang, W. Q., Dai, L., Ma, R. M., Liu, C., Sun, T., Qin, G. G. (2008) Back-gate ZnO nanowire field-effect transistors each with a top Ω shaped Au contact. Applied Physics Letters, 93 (3). 33102pp. doi:10.1063/1.2959075 |
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| In | (2008, July) Applied Physics Letters Vol. 93 (3) AIP Publishing |
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