Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2007) Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied Physics Letters, 90 (25). 252101pp. doi:10.1063/1.2746419

See Also

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	Afanas’ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2009) Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied Physics Letters, 95 (10). 102107pp. doi:10.1063/1.3204019
	Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C. (2008) Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics, 104 (9). 93713pp. doi:10.1063/1.2966482
	Afanas’ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., Fissel, A., Tian, W., Edge, L. F., Schlom, D. G. (2008) Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La,Nd,Gd,Lu): Effect of 4f-shell occupancy. Applied Physics Letters, 93 (19). 192105pp. doi:10.1063/1.3003872
	Laha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
	Laha, Apurba, Fissel, A., Osten, H. J. (2010) Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates. Applied Physics Letters, 96 (7). 72903pp. doi:10.1063/1.3318260
	Laha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
	Chou, H. Y., Badylevich, M., Afanas’ev, V. V., Houssa, M., Stesmans, A., Meersschaut, J., Goux, L., Kittl, J. A., Wouters, D. J. (2011) Electronic structure of NiO layers grown on Al2O3and SiO2using metallo-organic chemical vapour deposition. Journal of Applied Physics, 110 (11). 113724pp. doi:10.1063/1.3658802
	Afanas’ev, V. V., Shamuilia, S., Stesmans, A., Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Houssa, M., Brunco, D. P. (2006) Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators. Applied Physics Letters, 88 (13). 132111pp. doi:10.1063/1.2191736
	Laha, Apurba, Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A., Osten, H. J. (2008) Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films. Applied Physics Letters, 93 (18). 182907pp. doi:10.1063/1.3009206
	Afanas’ev, V. V., Badylevich, M., Houssa, M., Stesmans, A., Aggrawal, Gagan, Campbell, S. A. (2010) Electron energy band alignment at the NiO/SiO2 interface. Applied Physics Letters, 96 (17). 172105pp. doi:10.1063/1.3413960
	Shamuilia, S., Afanas’ev, V. V., Somers, P., Stesmans, A., Li, Y.-L., Tőkei, Zs., Groeseneken, G., Maex, K. (2006) Internal photoemission of electrons at interfaces of metals with low-κ insulators. Applied Physics Letters, 89 (20). 202909pp. doi:10.1063/1.2360893