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Laha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application
JournalApplied Physics Letters
AuthorsLaha, ApurbaAuthor
Osten, H. J.Author
Fissel, A.Author
Year2007 (March 12)Volume90
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2713142Search in ResearchGate
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Mindat Ref. ID8552859Long-form Identifiermindat:1:5:8552859:8
GUID0
Full ReferenceLaha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
Plain TextLaha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
In(2007, March) Applied Physics Letters Vol. 90 (11) AIP Publishing

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Laha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
Laha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104
Laha, Apurba, Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A., Osten, H. J. (2008) Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films. Applied Physics Letters, 93 (18). 182907pp. doi:10.1063/1.3009206
Laha, Apurba, Fissel, A., Osten, H. J. (2010) Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates. Applied Physics Letters, 96 (7). 72903pp. doi:10.1063/1.3318260
Ghosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application. Applied Physics Letters, 88 (17). 172107pp. doi:10.1063/1.2198518
Roy Chaudhuri, Ayan, Fissel, A., Archakam, V. R., Osten, H. J. (2013) Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied Physics Letters, 102 (2). 22904pp. doi:10.1063/1.4775688
Sun, Qing-Qing, Laha, Apurba, Ding, Shi-Jin, Zhang, David Wei, Osten, H. Jörg, Fissel, A. (2008) Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100). Applied Physics Letters, 92 (15). 152908pp. doi:10.1063/1.2912523
Laha, Apurba, Fissel, A., Osten, H. J. (2013) Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon. Applied Physics Letters, 102 (20). 202902pp. doi:10.1063/1.4807588
Czernohorsky, M., Bugiel, E., Osten, H. J., Fissel, A., Kirfel, O. (2006) Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001). Applied Physics Letters, 88 (15). 152905pp. doi:10.1063/1.2194227
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Erratum: “Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application” [Appl. Phys. Lett. 88, 172107 (2006)]. Applied Physics Letters, 89 (13). 139901pp. doi:10.1063/1.2354313
 
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