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Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C. (2008) Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics, 104 (9). 93713pp. doi:10.1063/1.2966482

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of the interface of aluminum nitride with Si(100)
JournalJournal of Applied Physics
AuthorsBadylevich, M.Author
Shamuilia, S.Author
Afanas’ev, V. V.Author
Stesmans, A.Author
Fedorenko, Y. G.Author
Zhao, C.Author
Year2008 (November)Volume104
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.2966482Search in ResearchGate
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Mindat Ref. ID5160727Long-form Identifiermindat:1:5:5160727:0
GUID0
Full ReferenceBadylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C. (2008) Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics, 104 (9). 93713pp. doi:10.1063/1.2966482
Plain TextBadylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C. (2008) Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics, 104 (9). 93713pp. doi:10.1063/1.2966482
In(2008, November) Journal of Applied Physics Vol. 104 (9) AIP Publishing

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Fedorenko, Y. G., Truong, L., Afanas’ev, V. V., Stesmans, A. (2004) Energy distribution of the (100)Si/HfO2 interface states. Applied Physics Letters, 84 (23). 4771-4773 doi:10.1063/1.1758302
Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2007) Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied Physics Letters, 90 (25). 252101pp. doi:10.1063/1.2746419
Fedorenko, Y. G., Truong, L., Afanas’ev, V. V., Stesmans, A., Zhang, Z., Campbell, S. A. (2005) Impact of nitrogen incorporation on interface states in (100)Si∕HfO2. Journal of Applied Physics, 98 (12). 123703pp. doi:10.1063/1.2140871
Afanas’ev, V. V., Fedorenko, Y. G., Stesmans, A. (2005) Interface traps and dangling-bond defects in (100)Ge∕HfO2. Applied Physics Letters, 87 (3). 32107pp. doi:10.1063/1.1947372
Shamuilia, S., Afanas’ev, V. V., Stesmans, A., McCarthy, I., Campbell, S. A., Boutchich, M., Roeckerath, M., Heeg, T., Lopes, J. M. J., Schubert, J. (2008) Photoconductivity of Hf-based binary metal oxide systems. Journal of Applied Physics, 104 (11). 114103pp. doi:10.1063/1.3020520
Afanas’ev, V. V., Badylevich, M., Houssa, M., Stesmans, A., Aggrawal, Gagan, Campbell, S. A. (2010) Electron energy band alignment at the NiO/SiO2 interface. Applied Physics Letters, 96 (17). 172105pp. doi:10.1063/1.3413960
Afanas’ev, V. V., Shamuilia, S., Stesmans, A., Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Houssa, M., Brunco, D. P. (2006) Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators. Applied Physics Letters, 88 (13). 132111pp. doi:10.1063/1.2191736
Afanas’ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2009) Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied Physics Letters, 95 (10). 102107pp. doi:10.1063/1.3204019
Stesmans, A., Afanas’ev, V. V. (2003) Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2. Applied Physics Letters, 82 (23). 4074-4076 doi:10.1063/1.1579564
Wang, W. C., Badylevich, M., Afanas’ev, V. V., Stesmans, A., Adelmann, C., Van Elshocht, S., Kittl, J. A., Lukosius, M., Walczyk, Ch., Wenger, Ch. (2009) Band alignment and electron traps in Y2O3 layers on (100)Si. Applied Physics Letters, 95 (13). 132903pp. doi:10.1063/1.3236536
Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Schram, T., Pantisano, L. (2008) Internal photoemission of electrons from Ta-based conductors into SiO[sub 2] and HfO[sub 2] insulators. Journal of Applied Physics, 104 (7). 73722pp. doi:10.1063/1.2976353
 
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