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Wang, W. C., Badylevich, M., Afanas’ev, V. V., Stesmans, A., Adelmann, C., Van Elshocht, S., Kittl, J. A., Lukosius, M., Walczyk, Ch., Wenger, Ch. (2009) Band alignment and electron traps in Y2O3 layers on (100)Si. Applied Physics Letters, 95 (13). 132903pp. doi:10.1063/1.3236536

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Reference TypeJournal (article/letter/editorial)
TitleBand alignment and electron traps in Y2O3 layers on (100)Si
JournalApplied Physics Letters
AuthorsWang, W. C.Author
Badylevich, M.Author
Afanas’ev, V. V.Author
Stesmans, A.Author
Adelmann, C.Author
Van Elshocht, S.Author
Kittl, J. A.Author
Lukosius, M.Author
Walczyk, Ch.Author
Wenger, Ch.Author
Year2009 (September 28)Volume95
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3236536Search in ResearchGate
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Mindat Ref. ID8577684Long-form Identifiermindat:1:5:8577684:9
GUID0
Full ReferenceWang, W. C., Badylevich, M., Afanas’ev, V. V., Stesmans, A., Adelmann, C., Van Elshocht, S., Kittl, J. A., Lukosius, M., Walczyk, Ch., Wenger, Ch. (2009) Band alignment and electron traps in Y2O3 layers on (100)Si. Applied Physics Letters, 95 (13). 132903pp. doi:10.1063/1.3236536
Plain TextWang, W. C., Badylevich, M., Afanas’ev, V. V., Stesmans, A., Adelmann, C., Van Elshocht, S., Kittl, J. A., Lukosius, M., Walczyk, Ch., Wenger, Ch. (2009) Band alignment and electron traps in Y2O3 layers on (100)Si. Applied Physics Letters, 95 (13). 132903pp. doi:10.1063/1.3236536
In(2009, September) Applied Physics Letters Vol. 95 (13) AIP Publishing

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Wang, W C, Badylevich, M, Afanas'ev, V V, Stesmans, A, Adelmann, C, Elshocht, S Van, Kittl, J A, Lukosius, M, Walczyk, Ch, Wenger, Ch (2010) Injection and trapping of electrons in Y2O3layers on Si. IOP Conference Series: Materials Science and Engineering, 8. 12028pp. doi:10.1088/1757-899x/8/1/012028
Afanas’ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2009) Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied Physics Letters, 95 (10). 102107pp. doi:10.1063/1.3204019
Afanas’ev, V. V., Badylevich, M., Houssa, M., Stesmans, A., Aggrawal, Gagan, Campbell, S. A. (2010) Electron energy band alignment at the NiO/SiO2 interface. Applied Physics Letters, 96 (17). 172105pp. doi:10.1063/1.3413960
Afanas’ev, V. V., Stesmans, A., Pantisano, L., Cimino, S., Adelmann, C., Goux, L., Chen, Y. Y., Kittl, J. A., Wouters, D., Jurczak, M. (2011) TiNx/HfO2 interface dipole induced by oxygen scavenging. Applied Physics Letters, 98 (13). 132901pp. doi:10.1063/1.3570647
Adelmann, C., Kesters, J., Opsomer, K., Detavernier, C., Kittl, J. A., Van Elshocht, S. (2009) Interdiffusion and crystallization in HfO2/Al2O3 superlattices. Applied Physics Letters, 95 (9). 91911pp. doi:10.1063/1.3223616
Afanas’ev, V. V., Stesmans, A., Zhao, C., Caymax, M., Rittersma, Z. M., Maes, J. W. (2005) Band alignment at the interface of (100)Si with Hf[sub x]Ta[sub 1−x]O[sub y] high-κ dielectric layers. Applied Physics Letters, 86 (7). 72108pp. doi:10.1063/1.1866640
Afanas’ev, V. V., Stesmans, A., Cherkaoui, K., Hurley, P. K. (2010) Electron energy band alignment at the (100)Si/MgO interface. Applied Physics Letters, 96 (5). 52103pp. doi:10.1063/1.3294328
Chou, Hsing-Yi, Afanas’ev, V. V., Stesmans, A., Lin, H. C., Hurley, P. K., Newcomb, S. B. (2010) Electron band alignment between (100)InP and atomic-layer deposited Al2O3. Applied Physics Letters, 97 (13). 132112pp. doi:10.1063/1.3496039
Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C. (2008) Electronic structure of the interface of aluminum nitride with Si(100). Journal of Applied Physics, 104 (9). 93713pp. doi:10.1063/1.2966482
Chou, H. Y., Badylevich, M., Afanas’ev, V. V., Houssa, M., Stesmans, A., Meersschaut, J., Goux, L., Kittl, J. A., Wouters, D. J. (2011) Electronic structure of NiO layers grown on Al2O3and SiO2using metallo-organic chemical vapour deposition. Journal of Applied Physics, 110 (11). 113724pp. doi:10.1063/1.3658802
Afanas’ev, V. V., Stesmans, A. (2004) Energy band alignment at the (100)Ge/HfO2 interface. Applied Physics Letters, 84 (13). 2319-2321 doi:10.1063/1.1688453
 
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