Kamiya, S., Iwami, M., Tsuchiya, T., Kurouchi, M., Kikawa, J., Yamada, T., Wakejima, A., Miyamoto, H., Suzuki, A., Hinoki, A., Araki, T., Nanishi, Y. (2007) Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 90 (21). 213511pp. doi:10.1063/1.2743383

See Also

These are possibly similar items as determined by title/reference text matching only.

	Yamada, T., Tsuchiya, T., Imada, K., Iwami, M., Kikawa, J., Araki, T., Suzuki, A., Nanishi, Y. (2007) Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy. physica status solidi (c), 4 (7). 2690-2694 doi:10.1002/pssc.200674763
	Hinoki, Akihiro, Kamiya, Shinichi, Tsuchiya, Tadayoshi, Yamada, Tomoyuki, Kikawa, Junjiroh, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) Correlation between the leakage current and the thickness of GaN-layer of AlGaN/GaN-HFET. physica status solidi (c), 4 (7). 2728-2731 doi:10.1002/pssc.200674848
	Nakagami, Kohei, Ohno, Yutaka, Kishimoto, Shigeru, Maezawa, Koichi, Mizutani, Takashi (2004) Surface potential measurements of AlGaN∕GaN high-electron-mobility transistors by Kelvin probe force microscopy. Applied Physics Letters, 85 (24). 6028-6029 doi:10.1063/1.1835551
	Kosaka, Kenichi, Fujishima, Tatsuya, Inoue, Kaoru, Hinoki, Akihiro, Yamada, Tomoaki, Tsuchiya, Tadayoshi, Kikawa, Junjiroh, Kamiya, Shinichi, Suzuki, Akira, Araki, Tsutomu, Nanishi, Yasushi (2007) Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation. physica status solidi (c), 4 (7). 2744-2747 doi:10.1002/pssc.200674906
	Kikawa, Junjiroh, Yamada, Tomoyuki, Tsuchiya, Tadayoshi, Kamiya, Shinichi, Kosaka, Kenichi, Hinoki, Akihiro, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers. physica status solidi (c), 4 (7). 2678-2681 doi:10.1002/pssc.200674738
	Arulkumaran, S., Hibino, T., Egawa, T., Ishikawa, H. (2004) Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation. Applied Physics Letters, 85 (23). 5745-5747 doi:10.1063/1.1830677
	Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., Sano, Y. (2004) Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride. Applied Physics Letters, 84 (4). 613-615 doi:10.1063/1.1642276
	Yamaguchi, T., Kurouchi, M., Naoi, H., Suzuki, A., Araki, T., Nanishi, Y. (2005) Growth of high-quality InN films by insertion of high-temperature InN buffer layer. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.106
	Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M., Oda, O. (2002) Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates. Applied Physics Letters, 81 (6). 1131-1133 doi:10.1063/1.1498874
	Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. (2003) Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 82 (18). 3110-3112 doi:10.1063/1.1571655
	Simms, R. J. T., Gao, F., Pei, Y., Palacios, T., Mishra, U. K., Kuball, M. (2010) Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence. Applied Physics Letters, 97 (3). 33502pp. doi:10.1063/1.3464959