Kikawa, Junjiroh, Yamada, Tomoyuki, Tsuchiya, Tadayoshi, Kamiya, Shinichi, Kosaka, Kenichi, Hinoki, Akihiro, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers. physica status solidi (c), 4 (7). 2678-2681 doi:10.1002/pssc.200674738

See Also

These are possibly similar items as determined by title/reference text matching only.

	Hinoki, Akihiro, Kamiya, Shinichi, Tsuchiya, Tadayoshi, Yamada, Tomoyuki, Kikawa, Junjiroh, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) Correlation between the leakage current and the thickness of GaN-layer of AlGaN/GaN-HFET. physica status solidi (c), 4 (7). 2728-2731 doi:10.1002/pssc.200674848
	Kosaka, Kenichi, Fujishima, Tatsuya, Inoue, Kaoru, Hinoki, Akihiro, Yamada, Tomoaki, Tsuchiya, Tadayoshi, Kikawa, Junjiroh, Kamiya, Shinichi, Suzuki, Akira, Araki, Tsutomu, Nanishi, Yasushi (2007) Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation. physica status solidi (c), 4 (7). 2744-2747 doi:10.1002/pssc.200674906
	Yamada, T., Tsuchiya, T., Imada, K., Iwami, M., Kikawa, J., Araki, T., Suzuki, A., Nanishi, Y. (2007) Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy. physica status solidi (c), 4 (7). 2690-2694 doi:10.1002/pssc.200674763
	Kaneko, Masamitsu, Fujishima, Tatsuya, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Kikawa, Junjiroh, Otake, Hirotaka, Nanishi, Yasushi (2009) Direct observation of crosssectional potential distribution in GaN-based MIS structures by Kelvin-probe force microscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880807
	Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi (2009) Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates. physica status solidi (c), 6. doi:10.1002/pssc.200880806
	Miyajima, Takao, Kudo, Yoshihiro, Wakahara, Akihiro, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi (2006) Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements. physica status solidi (c), 3 (6). 1746-1749 doi:10.1002/pssc.200565394
	Kamiya, S., Iwami, M., Tsuchiya, T., Kurouchi, M., Kikawa, J., Yamada, T., Wakejima, A., Miyamoto, H., Suzuki, A., Hinoki, A., Araki, T., Nanishi, Y. (2007) Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 90 (21). 213511pp. doi:10.1063/1.2743383
	Ohira, S., Suzuki, N., Minami, H., Takahashi, K., Araki, T., Nanishi, Y. (2007) Growth of hexagonal GaN films on the nitridated β-Ga2O3substrates using RF-MBE. physica status solidi (c), 4 (7). 2306-2309 doi:10.1002/pssc.200674877
	Kikawa, Junjiroh, Kaneko, Masamitsu, Otake, Hirotaka, Fujishima, Tatsuya, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Nanishi, Yasushi (2010) Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing. physica status solidi (b), 247 (7). 1649-1652 doi:10.1002/pssb.200983671
	Takagi, Yusuke, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi (2009) Growth of M -plane (10-10) InN on LiAlO2 (100) substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880980
	Fukui, Kazutoshi, Sawai, Syun, Ito, Tomoharu, Emura, Shuichi, Araki, Tsutomu, Suzuki, Akira (2010) Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+. physica status solidi (c), 7 (7). 1878-1880 doi:10.1002/pssc.200983538