Kosaka, Kenichi, Fujishima, Tatsuya, Inoue, Kaoru, Hinoki, Akihiro, Yamada, Tomoaki, Tsuchiya, Tadayoshi, Kikawa, Junjiroh, Kamiya, Shinichi, Suzuki, Akira, Araki, Tsutomu, Nanishi, Yasushi (2007) Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation. physica status solidi (c), 4 (7). 2744-2747 doi:10.1002/pssc.200674906

See Also

These are possibly similar items as determined by title/reference text matching only.

	Hinoki, Akihiro, Kamiya, Shinichi, Tsuchiya, Tadayoshi, Yamada, Tomoyuki, Kikawa, Junjiroh, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) Correlation between the leakage current and the thickness of GaN-layer of AlGaN/GaN-HFET. physica status solidi (c), 4 (7). 2728-2731 doi:10.1002/pssc.200674848
	Kikawa, Junjiroh, Yamada, Tomoyuki, Tsuchiya, Tadayoshi, Kamiya, Shinichi, Kosaka, Kenichi, Hinoki, Akihiro, Araki, Tsutomu, Suzuki, Akira, Nanishi, Yasushi (2007) An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers. physica status solidi (c), 4 (7). 2678-2681 doi:10.1002/pssc.200674738
	Yamada, T., Tsuchiya, T., Imada, K., Iwami, M., Kikawa, J., Araki, T., Suzuki, A., Nanishi, Y. (2007) Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy. physica status solidi (c), 4 (7). 2690-2694 doi:10.1002/pssc.200674763
	Kaneko, Masamitsu, Fujishima, Tatsuya, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Kikawa, Junjiroh, Otake, Hirotaka, Nanishi, Yasushi (2009) Direct observation of crosssectional potential distribution in GaN-based MIS structures by Kelvin-probe force microscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880807
	Kikawa, Junjiroh, Kaneko, Masamitsu, Otake, Hirotaka, Fujishima, Tatsuya, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Nanishi, Yasushi (2010) Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing. physica status solidi (b), 247 (7). 1649-1652 doi:10.1002/pssb.200983671
	Kamiya, S., Iwami, M., Tsuchiya, T., Kurouchi, M., Kikawa, J., Yamada, T., Wakejima, A., Miyamoto, H., Suzuki, A., Hinoki, A., Araki, T., Nanishi, Y. (2007) Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 90 (21). 213511pp. doi:10.1063/1.2743383
	Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi (2009) Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates. physica status solidi (c), 6. doi:10.1002/pssc.200880806
	Ohira, S., Suzuki, N., Minami, H., Takahashi, K., Araki, T., Nanishi, Y. (2007) Growth of hexagonal GaN films on the nitridated β-Ga2O3substrates using RF-MBE. physica status solidi (c), 4 (7). 2306-2309 doi:10.1002/pssc.200674877
	Shibata, E., Kaneko, M., Kikawa, J., Horiuchi, Y., Otake, H., Chikamatsu, K., Yamaguchi, A., Fujishima, T., Nanishi, Y. (2009) Dependence of annealing temperature on electrical properties of GaN MIS capacitors. physica status solidi (c), 6. doi:10.1002/pssc.200880981
	Tian, Feng, Chor, Eng Fong (2010) Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs. physica status solidi (c), 7 (7). 1941-1943 doi:10.1002/pssc.200983452
	Miyajima, Takao, Kudo, Yoshihiro, Wakahara, Akihiro, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi (2006) Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements. physica status solidi (c), 3 (6). 1746-1749 doi:10.1002/pssc.200565394