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Chen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E. (2007) Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. Applied Physics Letters, 90 (17). 171930pp. doi:10.1063/1.2734499

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Reference TypeJournal (article/letter/editorial)
TitleObservations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers
JournalApplied Physics Letters
AuthorsChen, Y.Author
Dudley, M.Author
Liu, K. X.Author
Stahlbush, R. E.Author
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2734499Search in ResearchGate
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Mindat Ref. ID8553736Long-form Identifiermindat:1:5:8553736:5
GUID0
Full ReferenceChen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E. (2007) Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. Applied Physics Letters, 90 (17). 171930pp. doi:10.1063/1.2734499
Plain TextChen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E. (2007) Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. Applied Physics Letters, 90 (17). 171930pp. doi:10.1063/1.2734499
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Zhang, N., Chen, Y., Zhang, Y., Dudley, M., Stahlbush, R. E. (2009) Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers. Applied Physics Letters, 94 (12). 122108pp. doi:10.1063/1.3105944
Chen, Yi, Huang, Xian Rong, Zhang, Ning, Dudley, Michael, Caldwell, Joshua D., Liu, Kendrick X., Stahlbush, Robert E. (2008) Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers. Materials Science Forum, 600. 357-360 doi:10.4028/www.scientific.net/msf.600-603.357
Chen, Yi, Dudley, Michael (2007) Direct determination of dislocation sense of closed-core threading screw dislocations using synchrotron white beam x-ray topography in 4H silicon carbide. Applied Physics Letters, 91 (14). 141918pp. doi:10.1063/1.2793705
Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J. (2007) Glide and multiplication of basal plane dislocations during 4H‐SiC homoepitaxy. Journal of Applied Physics, 102 (9). 93520pp. doi:10.1063/1.2809343
Chen, Y., Dhanaraj, G., Dudley, M., Sanchez, E. K., MacMillan, M. F. (2007) Sense determination of micropipes via grazing-incidence synchrotron white beam x-ray topography in 4H silicon carbide. Applied Physics Letters, 91 (7). 71917pp. doi:10.1063/1.2772190
Picard, Yoosuf N., Liu, Kendrick X., Stahlbush, Robert E., Twigg, Mark E., Zhang, Xuan, Skowronski, Marek (2008) Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H‐SiC epitaxial layers. Journal of Applied Physics, 103 (7). 74904pp. doi:10.1063/1.2903873
Sanchez, E. K., Liu, J. Q., De Graef, M., Skowronski, M., Vetter, W. M., Dudley, M. (2002) Nucleation of threading dislocations in sublimation grown silicon carbide. Journal of Applied Physics, 91 (3). 1143-1148 doi:10.1063/1.1428088
Liu, Kendrick X., Stahlbush, Robert E., Maximenko, Serguei I., Caldwell, Joshua D. (2007) Differences in emission spectra of Si- and C-core partial dislocations. Applied Physics Letters, 90 (15). 153503pp. doi:10.1063/1.2721139
Becker, L., Storck, P., Liu, Y., Schwalb, G., Schroeder, T., Fischer, I. A., Albrecht, M. (2024) Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1−xGex/Si(001) layers through dynamic growth rate control. Journal of Applied Physics, 135 (20) doi:10.1063/5.0204318
Picard, Y. N., Twigg, M. E., Mastro, M. A., Eddy, C. R., Henry, R. L., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A. (2007) Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC. Applied Physics Letters, 91 (1). 14101pp. doi:10.1063/1.2754638
Chen, Yi, Zhang, Ning, Huang, Xian Rong, Black, David R., Dudley, Michael (2008) Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer. Materials Science Forum, 600. 301-304 doi:10.4028/www.scientific.net/msf.600-603.301
 
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