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Liu, Kendrick X., Stahlbush, Robert E., Maximenko, Serguei I., Caldwell, Joshua D. (2007) Differences in emission spectra of Si- and C-core partial dislocations. Applied Physics Letters, 90 (15). 153503pp. doi:10.1063/1.2721139

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Reference TypeJournal (article/letter/editorial)
TitleDifferences in emission spectra of Si- and C-core partial dislocations
JournalApplied Physics Letters
AuthorsLiu, Kendrick X.Author
Stahlbush, Robert E.Author
Maximenko, Serguei I.Author
Caldwell, Joshua D.Author
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2721139Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553355Long-form Identifiermindat:1:5:8553355:4
GUID0
Full ReferenceLiu, Kendrick X., Stahlbush, Robert E., Maximenko, Serguei I., Caldwell, Joshua D. (2007) Differences in emission spectra of Si- and C-core partial dislocations. Applied Physics Letters, 90 (15). 153503pp. doi:10.1063/1.2721139
Plain TextLiu, Kendrick X., Stahlbush, Robert E., Maximenko, Serguei I., Caldwell, Joshua D. (2007) Differences in emission spectra of Si- and C-core partial dislocations. Applied Physics Letters, 90 (15). 153503pp. doi:10.1063/1.2721139
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

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Liu, Kendrick X., Zhang, X., Stahlbush, Robert E., Skowronski, Marek, Caldwell, Joshua D. (2008) Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers. Materials Science Forum, 600. 345-348 doi:10.4028/www.scientific.net/msf.600-603.345
Caldwell, Joshua D., Stahlbush, Robert E., Hobart, Karl D., Glembocki, Orest J., Liu, Kendrick X. (2007) Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing. Applied Physics Letters, 90 (14). 143519pp. doi:10.1063/1.2719650
Caldwell, Joshua D., Klein, P. B., Twigg, Mark E., Stahlbush, Robert E., Glembocki, Orest J., Liu, Kendrick X., Hobart, Karl D., Kub, Fritz (2006) Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes. Applied Physics Letters, 89 (10). 103519pp. doi:10.1063/1.2346135
Chen, Yi, Huang, Xian Rong, Zhang, Ning, Dudley, Michael, Caldwell, Joshua D., Liu, Kendrick X., Stahlbush, Robert E. (2008) Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers. Materials Science Forum, 600. 357-360 doi:10.4028/www.scientific.net/msf.600-603.357
Caldwell, Joshua D., Glembocki, Orest J., Stahlbush, Robert E., Hobart, Karl D. (2007) Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes. Applied Physics Letters, 91 (24). 243509pp. doi:10.1063/1.2824391
Maximenko, Serguei I., Pirouz, Pirouz, Sudarshan, Tangali S. (2005) Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes. Applied Physics Letters, 87 (3). 33503pp. doi:10.1063/1.1999297
Chen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E. (2007) Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. Applied Physics Letters, 90 (17). 171930pp. doi:10.1063/1.2734499
Caldwell, Joshua D., Giles, Alexander, Lepage, Dominic, Carrier, Dominic, Moumanis, Khalid, Hull, Brett A., Stahlbush, Robert E., Myers-Ward, Rachael L., Dubowski, Jan J., Verhaegen, Marc (2013) Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging. Applied Physics Letters, 102 (24). 242109pp. doi:10.1063/1.4810909
Caldwell, Joshua D., Stahlbush, Robert E., Glembocki, Orest J., Hobart, Karl D., Liu, Kendrick X., Tadjer, Marko J. (2008) Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes. Materials Science Forum, 600. 273-278 doi:10.4028/www.scientific.net/msf.600-603.273
Liu, Kendrick X., Stahlbush, Robert E., Hobart, Karl D., Sumakeris, Joseph J. (2006) Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures. Materials Science Forum, 527. 387-390 doi:10.4028/www.scientific.net/msf.527-529.387
Stahlbush, Robert E., Liu, Kendrick X., Zhang, Q., Sumakeris, Joseph J. (2007) Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy. Materials Science Forum, 556. 295-298 doi:10.4028/www.scientific.net/msf.556-557.295
 
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