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Sanchez, E. K., Liu, J. Q., De Graef, M., Skowronski, M., Vetter, W. M., Dudley, M. (2002) Nucleation of threading dislocations in sublimation grown silicon carbide. Journal of Applied Physics, 91 (3). 1143-1148 doi:10.1063/1.1428088

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Reference TypeJournal (article/letter/editorial)
TitleNucleation of threading dislocations in sublimation grown silicon carbide
JournalJournal of Applied Physics
AuthorsSanchez, E. K.Author
Liu, J. Q.Author
De Graef, M.Author
Skowronski, M.Author
Vetter, W. M.Author
Dudley, M.Author
Year2002 (February)Volume91
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1428088Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113424Long-form Identifiermindat:1:5:5113424:2
GUID0
Full ReferenceSanchez, E. K., Liu, J. Q., De Graef, M., Skowronski, M., Vetter, W. M., Dudley, M. (2002) Nucleation of threading dislocations in sublimation grown silicon carbide. Journal of Applied Physics, 91 (3). 1143-1148 doi:10.1063/1.1428088
Plain TextSanchez, E. K., Liu, J. Q., De Graef, M., Skowronski, M., Vetter, W. M., Dudley, M. (2002) Nucleation of threading dislocations in sublimation grown silicon carbide. Journal of Applied Physics, 91 (3). 1143-1148 doi:10.1063/1.1428088
In(2002, February) Journal of Applied Physics Vol. 91 (3) AIP Publishing

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Sanchez, E. K., Ha, S., Grim, J., Skowronski, M., Vetter, W. M., Dudley, M., Bertke, R., Mitchel, W. C. (2002) Assessment of Polishing-Related Surface Damage in Silicon Carbide. Journal of the Electrochemical Society, 149. doi:10.1149/1.1430416
Ha, Seoyong, Skowronski, Marek, Vetter, William M., Dudley, Michael (2002) Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals. Journal of Applied Physics, 92 (2). 778-785 doi:10.1063/1.1484229
Liu, J. Q., Sanchez, E. K., Skowronski, M. (2003) Surface-Damage-Induced Threading Dislocations in 6H-SiC Layers Grown by Physical Vapor Transport. Journal of the Electrochemical Society, 150. doi:10.1149/1.1545470
Qian, W., Skowronski, M., Kaspi, R., De Graef, M., Dravid, V. P. (1997) Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates. Journal of Applied Physics, 81 (11). 7268-7272 doi:10.1063/1.365324
Skowronski, M., Liu, J. Q., Vetter, W. M., Dudley, M., Hallin, C., Lendenmann, H. (2002) Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes. Journal of Applied Physics, 92 (8). 4699-4704 doi:10.1063/1.1505994
Kuhr, Thomas A., Sanchez, Edward K., Skowronski, Marek, Vetter, William M., Dudley, Michael (2001) Hexagonal voids and the formation of micropipes during SiC sublimation growth. Journal of Applied Physics, 89 (8). 4625-4630 doi:10.1063/1.1355716
Vetter, W. M., Dudley, M. (2001) Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide. Philosophical Magazine A, 81 (12). 2885-2902 doi:10.1080/01418610108217171
Dudley, W. M. Vetter, M. (2001) Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide. Philosophical Magazine A, 81 (12). 2885-2902 doi:10.1080/01418610110056907
Vetter, W. M., Tsuchida, H., Kamata, I., Dudley, M. (2005) Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers. Journal of Applied Crystallography, 38 (3). 442-447 doi:10.1107/s0021889805005819
Dudley, M., Huang, X. R., Huang, W., Powell, A., Wang, S., Neudeck, P., Skowronski, M. (1999) The mechanism of micropipe nucleation at inclusions in silicon carbide. Applied Physics Letters, 75 (6). 784-786 doi:10.1063/1.124512
Chen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E. (2007) Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. Applied Physics Letters, 90 (17). 171930pp. doi:10.1063/1.2734499
 
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