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Mei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817

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Reference TypeJournal (article/letter/editorial)
TitleBasal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations
JournalApplied Physics Letters
AuthorsMei, J.Author
Liu, R.Author
Ponce, F. A.Author
Omiya, H.Author
Mukai, T.Author
Year2007 (April 23)Volume90
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.2732817Search in ResearchGate
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Mindat Ref. ID8553686Long-form Identifiermindat:1:5:8553686:1
GUID0
Full ReferenceMei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817
Plain TextMei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817
In(2007, April) Applied Physics Letters Vol. 90 (17) AIP Publishing

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Liu, R., Mei, J., Srinivasan, S., Ponce, F. A., Omiya, H., Narukawa, Y., Mukai, T. (2006) Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures. Applied Physics Letters, 89 (20). 201911pp. doi:10.1063/1.2388895
Brooksby, J. C., Mei, J., Ponce, F. A. (2007) Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. Applied Physics Letters, 90 (23). 231901pp. doi:10.1063/1.2746062
Srinivasan, S., Stevens, M., Ponce, F. A., Omiya, H., Mukai, T. (2006) Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters, 89 (23). 231908pp. doi:10.1063/1.2397566
Omiya, H., Ponce, F. A., Marui, H., Tanaka, S., Mukai, T. (2004) Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters, 85 (25). 6143-6145 doi:10.1063/1.1840105
Mei, J., Srinivasan, S., Liu, R., Ponce, F. A., Narukawa, Y., Mukai, T. (2006) Prismatic stacking faults in epitaxially laterally overgrown GaN. Applied Physics Letters, 88 (14). 141912pp. doi:10.1063/1.2193352
Liu, Rong, Mei, Jin, Srinivasan, Sridhar, Omiya, Hiromasa, Ponce, Fernando A., Cherns, David, Narukawa, Yukio, Mukai, Takashi (2006) Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l549
Srinivasan, S., Geng, L., Liu, R., Ponce, F. A., Narukawa, Y., Tanaka, S. (2003) Slip systems and misfit dislocations in InGaN epilayers. Applied Physics Letters, 83 (25). 5187-5189 doi:10.1063/1.1633029
Wu, Z. H., Fischer, A. M., Ponce, F. A., Yokogawa, T., Yoshida, S., Kato, R. (2008) Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire. Applied Physics Letters, 93 (1). 11901pp. doi:10.1063/1.2953082
Cherns, D., Henley, S. J., Ponce, F. A. (2001) Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Applied Physics Letters, 78 (18). 2691-2693 doi:10.1063/1.1369610
Wu, Z. H., Stevens, M., Ponce, F. A., Lee, W., Ryou, J. H., Yoo, D., Dupuis, R. D. (2007) Mapping the electrostatic potential across AlGaN∕AlN∕GaN heterostructures using electron holography. Applied Physics Letters, 90 (3). 32101pp. doi:10.1063/1.2431716
Srinivasan, S., Stevens, M., Ponce, F. A., Mukai, T. (2005) Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets. Applied Physics Letters, 87 (13). 131911pp. doi:10.1063/1.2067693
 
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