登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Srinivasan, S., Stevens, M., Ponce, F. A., Omiya, H., Mukai, T. (2006) Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters, 89 (23). 231908pp. doi:10.1063/1.2397566

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleCarrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes
JournalApplied Physics Letters
AuthorsSrinivasan, S.Author
Stevens, M.Author
Ponce, F. A.Author
Omiya, H.Author
Mukai, T.Author
Year2006 (December 4)Volume89
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2397566Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551137Long-form Identifiermindat:1:5:8551137:6
GUID0
Full ReferenceSrinivasan, S., Stevens, M., Ponce, F. A., Omiya, H., Mukai, T. (2006) Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters, 89 (23). 231908pp. doi:10.1063/1.2397566
Plain TextSrinivasan, S., Stevens, M., Ponce, F. A., Omiya, H., Mukai, T. (2006) Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters, 89 (23). 231908pp. doi:10.1063/1.2397566
In(2006, December) Applied Physics Letters Vol. 89 (23) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Srinivasan, S., Stevens, M., Ponce, F. A., Mukai, T. (2005) Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets. Applied Physics Letters, 87 (13). 131911pp. doi:10.1063/1.2067693
Liu, R., Mei, J., Srinivasan, S., Ponce, F. A., Omiya, H., Narukawa, Y., Mukai, T. (2006) Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures. Applied Physics Letters, 89 (20). 201911pp. doi:10.1063/1.2388895
Stevens, M., Bell, A., McCartney, M. R., Ponce, F. A., Marui, H., Tanaka, S. (2004) Effect of layer thickness on the electrostatic potential in InGaN quantum wells. Applied Physics Letters, 85 (20). 4651-4653 doi:10.1063/1.1815376
Ueda, M., Kojima, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2006) Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates. Applied Physics Letters, 89 (21). 211907pp. doi:10.1063/1.2397029
Mei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817
Zang, K. Y., Wang, Y. D., Liu, H. F., Chua, S. J. (2006) Structural and optical properties of InGaN∕GaN multiple quantum wells grown on nano-air-bridged GaN template. Applied Physics Letters, 89 (17). 171921pp. doi:10.1063/1.2372686
Omiya, H., Ponce, F. A., Marui, H., Tanaka, S., Mukai, T. (2004) Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters, 85 (25). 6143-6145 doi:10.1063/1.1840105
Srinivasan, S., Bertram, F., Bell, A., Ponce, F. A., Tanaka, S., Omiya, H., Nakagawa, Y. (2002) Low Stokes shift in thick and homogeneous InGaN epilayers. Applied Physics Letters, 80 (4). 550-552 doi:10.1063/1.1436531
Schwarz, Ulrich T., Braun, H., Kojima, K., Kawakami, Y., Nagahama, S., Mukai, T. (2007) Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells. Applied Physics Letters, 91 (12). 123503pp. doi:10.1063/1.2786602
Liu, Rong, Mei, Jin, Srinivasan, Sridhar, Omiya, Hiromasa, Ponce, Fernando A., Cherns, David, Narukawa, Yukio, Mukai, Takashi (2006) Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l549
Mei, J., Srinivasan, S., Liu, R., Ponce, F. A., Narukawa, Y., Mukai, T. (2006) Prismatic stacking faults in epitaxially laterally overgrown GaN. Applied Physics Letters, 88 (14). 141912pp. doi:10.1063/1.2193352
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 02:55:26
Go to top of page