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Omiya, H., Ponce, F. A., Marui, H., Tanaka, S., Mukai, T. (2004) Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters, 85 (25). 6143-6145 doi:10.1063/1.1840105

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Reference TypeJournal (article/letter/editorial)
TitleAtomic arrangement at the Au∕p-GaN interface in low-resistance contacts
JournalApplied Physics Letters
AuthorsOmiya, H.Author
Ponce, F. A.Author
Marui, H.Author
Tanaka, S.Author
Mukai, T.Author
Year2004 (December 20)Volume85
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.1840105Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8541237Long-form Identifiermindat:1:5:8541237:6
GUID0
Full ReferenceOmiya, H., Ponce, F. A., Marui, H., Tanaka, S., Mukai, T. (2004) Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters, 85 (25). 6143-6145 doi:10.1063/1.1840105
Plain TextOmiya, H., Ponce, F. A., Marui, H., Tanaka, S., Mukai, T. (2004) Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters, 85 (25). 6143-6145 doi:10.1063/1.1840105
In(2004, December) Applied Physics Letters Vol. 85 (25) AIP Publishing

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Mei, J., Liu, R., Ponce, F. A., Omiya, H., Mukai, T. (2007) Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters, 90 (17). 171922pp. doi:10.1063/1.2732817
Liu, R., Mei, J., Srinivasan, S., Ponce, F. A., Omiya, H., Narukawa, Y., Mukai, T. (2006) Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures. Applied Physics Letters, 89 (20). 201911pp. doi:10.1063/1.2388895
Stevens, M., Bell, A., McCartney, M. R., Ponce, F. A., Marui, H., Tanaka, S. (2004) Effect of layer thickness on the electrostatic potential in InGaN quantum wells. Applied Physics Letters, 85 (20). 4651-4653 doi:10.1063/1.1815376
Srinivasan, S., Stevens, M., Ponce, F. A., Omiya, H., Mukai, T. (2006) Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters, 89 (23). 231908pp. doi:10.1063/1.2397566
Liu, R., Bell, A., Ponce, F. A., Kamiyama, S., Amano, H., Akasaki, I. (2002) Atomic arrangement at the AlN/ZrB2 interface. Applied Physics Letters, 81 (17). 3182-3184 doi:10.1063/1.1516876
Bell, A., Christen, J., Bertram, F., Ponce, F. A., Marui, H., Tanaka, S. (2004) Localization versus field effects in single InGaN quantum wells. Applied Physics Letters, 84 (1). 58-60 doi:10.1063/1.1638880
Srinivasan, S., Bertram, F., Bell, A., Ponce, F. A., Tanaka, S., Omiya, H., Nakagawa, Y. (2002) Low Stokes shift in thick and homogeneous InGaN epilayers. Applied Physics Letters, 80 (4). 550-552 doi:10.1063/1.1436531
Liu, R., Ponce, F. A., Dadgar, A., Krost, A. (2003) Atomic arrangement at the AlN/Si (111) interface. Applied Physics Letters, 83 (5). 860-862 doi:10.1063/1.1597749
Kalaitzakis, F. G., Pelekanos, N. T., Prystawko, P., Leszczynski, M., Konstantinidis, G. (2007) Low resistance as-deposited Cr∕Au contacts on p-type GaN. Applied Physics Letters, 91 (26). 261103pp. doi:10.1063/1.2828044
Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F. A., Christen, J., Tanaka, S., Fujioka, A., Nakagawa, Y. (2004) Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers. Journal of Applied Physics, 95 (9). 4670-4674 doi:10.1063/1.1689736
Ponce, F. A., Srinivasan, S., Bell, A., Geng, L., Liu, R., Stevens, M., Cai, J., Omiya, H., Marui, H., Tanaka, S. (2003) Microstructure and electronic properties of InGaN alloys. physica status solidi (b), 240 (2). 273-284 doi:10.1002/pssb.200303527
 
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