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Aarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561

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Reference TypeJournal (article/letter/editorial)
TitleAbsolute in situ measurement of surface dangling bonds during a-Si:H growth
JournalApplied Physics Letters
AuthorsAarts, I. M. P.Author
Pipino, A. C. R.Author
van de Sanden, M. C. M.Author
Kessels, W. M. M.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2727561Search in ResearchGate
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Mindat Ref. ID8553545Long-form Identifiermindat:1:5:8553545:5
GUID0
Full ReferenceAarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561
Plain TextAarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Gielis, J. J. H., van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Applied Physics Letters, 90 (20). 202108pp. doi:10.1063/1.2740474
Aarts, I. M. P., Pipino, A. C. R., Hoefnagels, J. P. M., Kessels, W. M. M., van de Sanden, M. C. M. (2005) Quasi-Ice Monolayer on Atomically Smooth AmorphousSiO2at Room Temperature Observed with a High-Finesse Optical Resonator. Physical Review Letters, 95 (16). doi:10.1103/physrevlett.95.166104
Aarts, I. M. P., Hoex, B., Smets, A. H. M., Engeln, R., Kessels, W. M. M., van de Sanden, M. C. M. (2004) Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy. Applied Physics Letters, 84 (16). 3079-3081 doi:10.1063/1.1713047
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2005) Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth. Applied Physics Letters, 86 (4). 41909pp. doi:10.1063/1.1853508
Dingemans, G., van den Donker, M. N., Gordijn, A., Kessels, W. M. M., van de Sanden, M. C. M. (2007) Probing the phase composition of silicon films in situ by etch product detection. Applied Physics Letters, 91 (16). 161902pp. doi:10.1063/1.2799738
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth. Applied Physics Letters, 82 (6). 865-867 doi:10.1063/1.1543237
Mertens, H., Polman, A., Aarts, I. M. P., Kessels, W. M. M., van de Sanden, M. C. M. (2005) Absence of the enhanced intra-4f transition cross section at 1.5μm of Er3+ in Si-rich SiO2. Applied Physics Letters, 86 (24). 241109pp. doi:10.1063/1.1949720
Kessels, W. M. M., Gielis, J. J. H., Aarts, I. M. P., Leewis, C. M., van de Sanden, M. C. M. (2004) Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films. Applied Physics Letters, 85 (18). 4049-4051 doi:10.1063/1.1812836
Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2007) The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition. Journal of Applied Physics, 102 (7). 73523pp. doi:10.1063/1.2786873
Hoefnagels, J. P. M., Barrell, Y., Kessels, W. M. M., van de Sanden, M. C. M. (2004) Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures. Journal of Applied Physics, 96 (8). 4094-4106 doi:10.1063/1.1793359
Kessels, W. M. M., Nadir, K., van de Sanden, M. C. M. (2006) SiHx film growth precursors during high-rate nanocrystalline silicon deposition. Journal of Applied Physics, 99 (7). 76110pp. doi:10.1063/1.2188068
 
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