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Dingemans, G., van den Donker, M. N., Gordijn, A., Kessels, W. M. M., van de Sanden, M. C. M. (2007) Probing the phase composition of silicon films in situ by etch product detection. Applied Physics Letters, 91 (16). 161902pp. doi:10.1063/1.2799738

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Reference TypeJournal (article/letter/editorial)
TitleProbing the phase composition of silicon films in situ by etch product detection
JournalApplied Physics Letters
AuthorsDingemans, G.Author
van den Donker, M. N.Author
Gordijn, A.Author
Kessels, W. M. M.Author
van de Sanden, M. C. M.Author
Year2007 (October 15)Volume91
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2799738Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8556500Long-form Identifiermindat:1:5:8556500:3
GUID0
Full ReferenceDingemans, G., van den Donker, M. N., Gordijn, A., Kessels, W. M. M., van de Sanden, M. C. M. (2007) Probing the phase composition of silicon films in situ by etch product detection. Applied Physics Letters, 91 (16). 161902pp. doi:10.1063/1.2799738
Plain TextDingemans, G., van den Donker, M. N., Gordijn, A., Kessels, W. M. M., van de Sanden, M. C. M. (2007) Probing the phase composition of silicon films in situ by etch product detection. Applied Physics Letters, 91 (16). 161902pp. doi:10.1063/1.2799738
In(2007, October) Applied Physics Letters Vol. 91 (16) AIP Publishing

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Dingemans, G., van den Donker, M. N., Hrunski, D., Gordijn, A., Kessels, W. M. M., van de Sanden, M. C. M. (2008) The atomic hydrogen flux to silicon growth flux ratio during microcrystalline silicon solar cell deposition. Applied Physics Letters, 93 (11). 111914pp. doi:10.1063/1.2987519
van den Donker, M. N., Klein, S., Rech, B., Finger, F., Kessels, W. M. M., van de Sanden, M. C. M. (2007) Microcrystalline silicon solar cells with an open-circuit voltage above 600mV. Applied Physics Letters, 90 (18). 183504pp. doi:10.1063/1.2734375
van den Donker, M. N., Rech, B., Finger, F., Kessels, W. M. M., van de Sanden, M. C. M. (2005) Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow. Applied Physics Letters, 87 (26). 263503pp. doi:10.1063/1.2152115
Dingemans, G., Beyer, W., van de Sanden, M. C. M., Kessels, W. M. M. (2010) Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks. Applied Physics Letters, 97 (15). 152106pp. doi:10.1063/1.3497014
Dingemans, G., Mandoc, M. M., Bordihn, S., van de Sanden, M. C. M., Kessels, W. M. M. (2011) Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks. Applied Physics Letters, 98 (22). 222102pp. doi:10.1063/1.3595940
Smit, C., van Swaaij, R. A. C. M. M., Donker, H., Petit, A. M. H. N., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Determining the material structure of microcrystalline silicon from Raman spectra. Journal of Applied Physics, 94 (5). 3582-3588 doi:10.1063/1.1596364
van den Donker, M N, Rech, B, Kessels, W M M, van de Sanden, M C M (2007) Transient depletion of source gases during materials processing: a case study on the plasma deposition of microcrystalline silicon. New Journal of Physics, 9. 280 doi:10.1088/1367-2630/9/8/280
Terlinden, N. M., Dingemans, G., van de Sanden, M. C. M, Kessels, W. M. M. (2010) Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3. Applied Physics Letters, 96 (11). 112101pp. doi:10.1063/1.3334729
Aarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561
Dingemans, G., Clark, A., van Delft, J. A., van de Sanden, M. C. M., Kessels, W. M. M. (2011) Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100). Journal of Applied Physics, 109 (11). 113107pp. doi:10.1063/1.3595691
van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Real time spectroscopic ellipsometry on ultrathin (<50Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100). Journal of Applied Physics, 101 (12). 123529pp. doi:10.1063/1.2749466
 
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