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Gielis, J. J. H., van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Applied Physics Letters, 90 (20). 202108pp. doi:10.1063/1.2740474

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Reference TypeJournal (article/letter/editorial)
Titlea-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes
JournalApplied Physics Letters
AuthorsGielis, J. J. H.Author
van den Oever, P. J.Author
van de Sanden, M. C. M.Author
Kessels, W. M. M.Author
Year2007 (May 14)Volume90
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2740474Search in ResearchGate
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Mindat Ref. ID8554182Long-form Identifiermindat:1:5:8554182:7
GUID0
Full ReferenceGielis, J. J. H., van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Applied Physics Letters, 90 (20). 202108pp. doi:10.1063/1.2740474
Plain TextGielis, J. J. H., van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Applied Physics Letters, 90 (20). 202108pp. doi:10.1063/1.2740474
In(2007, May) Applied Physics Letters Vol. 90 (20) AIP Publishing

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Gielis, J. J. H., van den Oever, P. J., Hoex, B., van de Sanden, M. C. M., Kessels, W. M. M. (2008) Real-time study ofa−Si:H∕c−Siheterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation. Physical Review B, 77 (20) doi:10.1103/physrevb.77.205329
van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Real time spectroscopic ellipsometry on ultrathin (<50Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100). Journal of Applied Physics, 101 (12). 123529pp. doi:10.1063/1.2749466
van den Oever, P. J., van Helden, J. H., Lamers, C. C. H., Engeln, R., Schram, D. C., van de Sanden, M. C. M., Kessels, W. M. M. (2005) Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet. Journal of Applied Physics, 98 (9). 93301pp. doi:10.1063/1.2123371
Hoex, B., Gielis, J. J. H., van de Sanden, M. C. M., Kessels, W. M. M. (2008) On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3. Journal of Applied Physics, 104 (11). 113703pp. doi:10.1063/1.3021091
van Helden, J. H., van den Oever, P. J., Kessels, W. M. M., van de Sanden, M. C. M., Schram, D. C., Engeln, R. (2007) Production Mechanisms of NH and NH2Radicals in N2−H2Plasmas. The Journal of Physical Chemistry A, 111 (45). 11460-11472 doi:10.1021/jp0727650
Aarts, I. M. P., Pipino, A. C. R., van de Sanden, M. C. M., Kessels, W. M. M. (2007) Absolute in situ measurement of surface dangling bonds during a-Si:H growth. Applied Physics Letters, 90 (16). 161918pp. doi:10.1063/1.2727561
van den Oever, P. J., van Helden, J. H., van Hemmen, J. L., Engeln, R., Schram, D. C., van de Sanden, M. C. M., Kessels, W. M. M. (2006) N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition. Journal of Applied Physics, 100 (9). 93303pp. doi:10.1063/1.2358330
Aarts, I. M. P., Gielis, J. J. H., van de Sanden, M. C. M., Kessels, W. M. M. (2006) Probing hydrogenated amorphous silicon surface states by spectroscopic and real-time second-harmonic generation. Physical Review B, 73 (4) doi:10.1103/physrevb.73.045327
Kessels, W. M. M., Gielis, J. J. H., Aarts, I. M. P., Leewis, C. M., van de Sanden, M. C. M. (2004) Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films. Applied Physics Letters, 85 (18). 4049-4051 doi:10.1063/1.1812836
Gielis, J. J. H., Hoex, B., van de Sanden, M. C. M., Kessels, W. M. M. (2008) Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation. Journal of Applied Physics, 104 (7). 73701pp. doi:10.1063/1.2985906
Gielis, J. J. H., Gevers, P. M., Stevens, A. A. E., Beijerinck, H. C. W., van de Sanden, M. C. M., Kessels, W. M. M. (2006) Spectroscopic second-harmonic generation duringAr+-ion bombardment of Si(100) Physical Review B, 74 (16) doi:10.1103/physrevb.74.165311
 
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