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Ngo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Tuning InAs quantum dots for high areal density and wideband emission. Applied Physics Letters, 90 (11). 113103pp. doi:10.1063/1.2713148

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Reference TypeJournal (article/letter/editorial)
TitleTuning InAs quantum dots for high areal density and wideband emission
JournalApplied Physics Letters
AuthorsNgo, C. Y.Author
Yoon, S. F.Author
Fan, W. J.Author
Chua, S. J.Author
Year2007 (March 12)Volume90
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2713148Search in ResearchGate
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Mindat Ref. ID8552864Long-form Identifiermindat:1:5:8552864:0
GUID0
Full ReferenceNgo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Tuning InAs quantum dots for high areal density and wideband emission. Applied Physics Letters, 90 (11). 113103pp. doi:10.1063/1.2713148
Plain TextNgo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Tuning InAs quantum dots for high areal density and wideband emission. Applied Physics Letters, 90 (11). 113103pp. doi:10.1063/1.2713148
In(2007, March) Applied Physics Letters Vol. 90 (11) AIP Publishing

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Ngo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Origins of high radiative efficiency and wideband emission from InAs quantum dots. Applied Physics Letters, 91 (19). 191901pp. doi:10.1063/1.2807269
Ngo, C. Y., Yoon, S. F., Lim, D. R., Wong, Vincent, Chua, S. J. (2009) Optical properties of 1.3 μm InAs/GaAs bilayer quantum dots with high areal density. Applied Physics Letters, 95 (18). 181913pp. doi:10.1063/1.3262960
Chia, C. K., Zhang, Y. W., Wong, S. S., Yong, A. M., Chow, S. Y., Chua, S. J., Guo, J. (2007) Saturated dot density of InAs∕GaAs self-assembled quantum dots grown at high growth rate. Applied Physics Letters, 90 (16). 161906pp. doi:10.1063/1.2724776
Ngo, C. Y., Yoon, S. F., Lim, D. R., Wong, Vincent, Chua, S. J. (2008) Temperature-dependent photoluminescence study of 1.3μm undoped InAs∕InGaAs∕GaAs quantum dots. Applied Physics Letters, 93 (4). 41912pp. doi:10.1063/1.2958349
Ngo, C. Y., Yoon, S. F., Chua, S. J. (2009) Ambient temperature dependence on emission spectrum of InAs quantum dots. physica status solidi (b), 246 (4). 799-802 doi:10.1002/pssb.200880575
Ngo, C. Y., Yoon, S. F., Loke, W. K., Cao, Q., Lim, D. R., Wong, Vincent, Sim, Y. K., Chua, S. J. (2009) Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator. Applied Physics Letters, 94 (14). 143108pp. doi:10.1063/1.3119186
Ngo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2006) Effects of size and shape on electronic states of quantum dots. Physical Review B, 74 (24) doi:10.1103/physrevb.74.245331
Sun, Z. Z., Yoon, S. F., Loke, W. K., Liu, C. Y. (2006) Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer. Applied Physics Letters, 88 (20). 203114pp. doi:10.1063/1.2206248
Miao, Z. L., Zhang, Y. W., Chua, S. J., Chye, Y. H., Chen, P., Tripathy, S. (2005) Optical properties of InAs∕GaAs surface quantum dots. Applied Physics Letters, 86 (3). 31914pp. doi:10.1063/1.1854199
Liu, C. Y., Yoon, S. F., Cao, Q., Tong, C. Z., Li, H. F. (2007) Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers. Applied Physics Letters, 90 (4). 41103pp. doi:10.1063/1.2434156
Xu, S. J., Wang, X. C., Chua, S. J., Wang, C. H., Fan, W. J., Jiang, J., Xie, X. G. (1998) Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 72 (25). 3335-3337 doi:10.1063/1.121595
 
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