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Sun, Z. Z., Yoon, S. F., Loke, W. K., Liu, C. Y. (2006) Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer. Applied Physics Letters, 88 (20). 203114pp. doi:10.1063/1.2206248

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer
JournalApplied Physics Letters
AuthorsSun, Z. Z.Author
Yoon, S. F.Author
Loke, W. K.Author
Liu, C. Y.Author
Year2006 (May 15)Volume88
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2206248Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8547743Long-form Identifiermindat:1:5:8547743:4
GUID0
Full ReferenceSun, Z. Z., Yoon, S. F., Loke, W. K., Liu, C. Y. (2006) Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer. Applied Physics Letters, 88 (20). 203114pp. doi:10.1063/1.2206248
Plain TextSun, Z. Z., Yoon, S. F., Loke, W. K., Liu, C. Y. (2006) Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer. Applied Physics Letters, 88 (20). 203114pp. doi:10.1063/1.2206248
In(2006, May) Applied Physics Letters Vol. 88 (20) AIP Publishing

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Ngo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Tuning InAs quantum dots for high areal density and wideband emission. Applied Physics Letters, 90 (11). 113103pp. doi:10.1063/1.2713148
Chen, Y. H., Sun, J., Jin, P., Wang, Z. G., Yang, Z. (2006) Evolution of wetting layer of InAs∕GaAs quantum dots studied by reflectance difference spectroscopy. Applied Physics Letters, 88 (7). 71903pp. doi:10.1063/1.2175489
Liu, C. Y., Yoon, S. F., Sun, Z. Z., Yew, K. C. (2006) High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy. Applied Physics Letters, 88 (8). 81105pp. doi:10.1063/1.2178231
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Ngo, C. Y., Yoon, S. F., Fan, W. J., Chua, S. J. (2007) Origins of high radiative efficiency and wideband emission from InAs quantum dots. Applied Physics Letters, 91 (19). 191901pp. doi:10.1063/1.2807269
Sun, K. W., Kechiantz, A., Lee, B. C., Lee, C. P. (2006) Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots. Applied Physics Letters, 88 (16). 163117pp. doi:10.1063/1.2197309
Ngo, C. Y., Yoon, S. F., Loke, W. K., Cao, Q., Lim, D. R., Wong, Vincent, Sim, Y. K., Chua, S. J. (2009) Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator. Applied Physics Letters, 94 (14). 143108pp. doi:10.1063/1.3119186
Tanoto, H., Yoon, S. F., Lew, K. L., Loke, W. K., Dohrman, C., Fitzgerald, E. A., Tang, L. J. (2009) Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate. Applied Physics Letters, 95 (14). 141905pp. doi:10.1063/1.3243984
Ulloa, J. M., Reyes, D. F., Montes, M., Yamamoto, K., Sales, D. L., González, D., Guzman, A., Hierro, A. (2012) Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer. Applied Physics Letters, 100 (1). 13107pp. doi:10.1063/1.3673563
Wang, F. Z., Chen, Z. H., Bai, L. H., Huang, S. H., Xiong, H., Shen, S. C., Sun, J., Jin, P., Wang, Z. G. (2005) Observation of intershell and hybridized energy states in InAs∕GaAs quantum dots. Applied Physics Letters, 87 (9). 93104pp. doi:10.1063/1.2034104
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