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Liu, C. Y., Yoon, S. F., Cao, Q., Tong, C. Z., Li, H. F. (2007) Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers. Applied Physics Letters, 90 (4). 41103pp. doi:10.1063/1.2434156

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Reference TypeJournal (article/letter/editorial)
TitleLow transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers
JournalApplied Physics Letters
AuthorsLiu, C. Y.Author
Yoon, S. F.Author
Cao, Q.Author
Tong, C. Z.Author
Li, H. F.Author
Year2007 (January 22)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2434156Search in ResearchGate
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Mindat Ref. ID8555047Long-form Identifiermindat:1:5:8555047:2
GUID0
Full ReferenceLiu, C. Y., Yoon, S. F., Cao, Q., Tong, C. Z., Li, H. F. (2007) Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers. Applied Physics Letters, 90 (4). 41103pp. doi:10.1063/1.2434156
Plain TextLiu, C. Y., Yoon, S. F., Cao, Q., Tong, C. Z., Li, H. F. (2007) Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers. Applied Physics Letters, 90 (4). 41103pp. doi:10.1063/1.2434156
In(2007, January) Applied Physics Letters Vol. 90 (4) AIP Publishing

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Cao, Q., Yoon, S. F., Tong, C. Z., Ngo, C. Y., Liu, C. Y., Wang, R., Zhao, H. X. (2009) Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Applied Physics Letters, 95 (19). 191101pp. doi:10.1063/1.3259659
Tong, C. Z., Yoon, S. F., Liu, C. Y. (2007) Rate equation model of the negative characteristic temperature of InAs∕GaAs quantum dot lasers. Journal of Applied Physics, 101 (10). 104506pp. doi:10.1063/1.2722248
Badcock, T. J., Royce, R. J., Mowbray, D. J., Skolnick, M. S., Liu, H. Y., Hopkinson, M., Groom, K. M., Jiang, Q. (2007) Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers. Applied Physics Letters, 90 (11). 111102pp. doi:10.1063/1.2713136
Zhao, H X, Yoon, S F, Ngo, C Y, Wang, R, Tong, C Z, Liu, C Y, Cao, Q (2010) Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers. IEEE Photonics Journal, 2 (4) 630-635 doi:10.1109/jphot.2010.2052843
Ngo, C. Y., Yoon, S. F., Lim, D. R., Wong, Vincent, Chua, S. J. (2008) Temperature-dependent photoluminescence study of 1.3μm undoped InAs∕InGaAs∕GaAs quantum dots. Applied Physics Letters, 93 (4). 41912pp. doi:10.1063/1.2958349
Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, F., Jin, C. Y., Hopkinson, M., Hogg, R. A. (2006) p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letters, 89 (7). 73113pp. doi:10.1063/1.2336998
Chen, P., Gong, Q., Cao, C. F., Li, S. G., Wang, Y., Liu, Q. B., Yue, L., Zhang, Y. G., Feng, S. L., Ma, C. H., Wang, H. L. (2011) High performance external cavity InAs/InP quantum dot lasers. Applied Physics Letters, 98 (12). 121102pp. doi:10.1063/1.3569819
Cao, Q., Yoon, S. F., Liu, C. Y., Tong, C. Z. (2008) Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures. Journal of Applied Physics, 104 (3). 33522pp. doi:10.1063/1.2963689
Ngo, C. Y., Yoon, S. F., Loke, W. K., Cao, Q., Lim, D. R., Wong, Vincent, Sim, Y. K., Chua, S. J. (2009) Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator. Applied Physics Letters, 94 (14). 143108pp. doi:10.1063/1.3119186
Liu, C. Y., Yoon, S. F., Sun, Z. Z., Yew, K. C. (2006) High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy. Applied Physics Letters, 88 (8). 81105pp. doi:10.1063/1.2178231
Xu, D. W., Tong, C. Z., Yoon, S. F., Zhao, L. J., Ding, Y., Fan, W. J. (2010) Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers. Journal of Applied Physics, 107 (6). 63107pp. doi:10.1063/1.3309954
 
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