Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, F., Jin, C. Y., Hopkinson, M., Hogg, R. A. (2006) p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letters, 89 (7). 73113pp. doi:10.1063/1.2336998

See Also

These are possibly similar items as determined by title/reference text matching only.

	Badcock, T. J., Royce, R. J., Mowbray, D. J., Skolnick, M. S., Liu, H. Y., Hopkinson, M., Groom, K. M., Jiang, Q. (2007) Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers. Applied Physics Letters, 90 (11). 111102pp. doi:10.1063/1.2713136
	Liu, H. Y., Sellers, I. R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Groom, K. M., Gutiérrez, M., Hopkinson, M., Ng, J. S., David, J. P. R., Beanland, R. (2004) Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Applied Physics Letters, 85 (5). 704-706 doi:10.1063/1.1776631
	Liu, H. Y., Steer, M. J., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Navaretti, P., Groom, K. M., Hopkinson, M., Hogg, R. A. (2005) Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 86 (14). 143108pp. doi:10.1063/1.1897850
	Jang, Y. D., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Park, J., Lee, D., Liu, H. Y., Hopkinson, M., Hogg, R. A., Andreev, A. D. (2008) Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots. Applied Physics Letters, 93 (10). 101903pp. doi:10.1063/1.2975961
	Ray, S. K., Groom, K. M., Alexander, R., Kennedy, K., Liu, H. Y., Hopkinson, M., Hogg, R. A. (2006) Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode. Journal of Applied Physics, 100 (10). 103105pp. doi:10.1063/1.2365387
	Jang, Y. D., Park, J., Lee, D., Mowbray, D. J., Skolnick, M. S., Liu, H. Y., Hopkinson, M., Hogg, R. A. (2009) Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. Applied Physics Letters, 95 (17). 171902pp. doi:10.1063/1.3255017
	Sellers, I. R., Mowbray, D. J., Badcock, T. J., Wells, J.-P. R., Phillips, P. J., Carder, D. A., Liu, H. Y., Groom, K. M., Hopkinson, M. (2006) Infrared modulated interlevel spectroscopy of 1.3μm self-assembled quantum dot lasers using a free electron laser. Applied Physics Letters, 88 (8). 81108pp. doi:10.1063/1.2177656
	Liu, H. Y., Sellers, I. R., Gutiérrez, M., Groom, K. M., Soong, W. M., Hopkinson, M., David, J. P. R., Beanland, R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S. (2004) Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures. Journal of Applied Physics, 96 (4). 1988-1992 doi:10.1063/1.1773378
	Sandall, I. C., Smowton, P. M., Thomson, J. D., Badcock, T., Mowbray, D. J., Liu, H.-Y., Hopkinson, M. (2006) Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters, 89 (15). 151118pp. doi:10.1063/1.2361167
	Jin, C. Y., Liu, H. Y., Zhang, S. Y., Jiang, Q., Liew, S. L., Hopkinson, M., Badcock, T. J., Nabavi, E., Mowbray, D. J. (2007) Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 91 (2). 21102pp. doi:10.1063/1.2752778
	Liu, H. Y., Steer, M. J., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Suarez, F., Ng, J. S., Hopkinson, M., David, J. P. R. (2006) Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer. Journal of Applied Physics, 99 (4). 46104pp. doi:10.1063/1.2173188