Jin, C. Y., Liu, H. Y., Zhang, S. Y., Jiang, Q., Liew, S. L., Hopkinson, M., Badcock, T. J., Nabavi, E., Mowbray, D. J. (2007) Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 91 (2). 21102pp. doi:10.1063/1.2752778
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer | ||
| Journal | Applied Physics Letters | ||
| Authors | Jin, C. Y. | Author | |
| Liu, H. Y. | Author | ||
| Zhang, S. Y. | Author | ||
| Jiang, Q. | Author | ||
| Liew, S. L. | Author | ||
| Hopkinson, M. | Author | ||
| Badcock, T. J. | Author | ||
| Nabavi, E. | Author | ||
| Mowbray, D. J. | Author | ||
| Year | 2007 (July 9) | Volume | 91 |
| Issue | 2 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2752778Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8557366 | Long-form Identifier | mindat:1:5:8557366:8 |
| GUID | 0 | ||
| Full Reference | Jin, C. Y., Liu, H. Y., Zhang, S. Y., Jiang, Q., Liew, S. L., Hopkinson, M., Badcock, T. J., Nabavi, E., Mowbray, D. J. (2007) Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 91 (2). 21102pp. doi:10.1063/1.2752778 | ||
| Plain Text | Jin, C. Y., Liu, H. Y., Zhang, S. Y., Jiang, Q., Liew, S. L., Hopkinson, M., Badcock, T. J., Nabavi, E., Mowbray, D. J. (2007) Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 91 (2). 21102pp. doi:10.1063/1.2752778 | ||
| In | (2007, July) Applied Physics Letters Vol. 91 (2) AIP Publishing | ||
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