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Moore, J. C., Kasliwal, V., Baski, A. A., Ni, X., Özgür, Ü., Morkoç, H. (2007) Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth. Applied Physics Letters, 90 (1). 11913pp. doi:10.1063/1.2429901

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Reference TypeJournal (article/letter/editorial)
TitleLocal electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth
JournalApplied Physics Letters
AuthorsMoore, J. C.Author
Kasliwal, V.Author
Baski, A. A.Author
Ni, X.Author
Özgür, Ü.Author
Morkoç, H.Author
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2429901Search in ResearchGate
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Mindat Ref. ID8552637Long-form Identifiermindat:1:5:8552637:8
GUID0
Full ReferenceMoore, J. C., Kasliwal, V., Baski, A. A., Ni, X., Özgür, Ü., Morkoç, H. (2007) Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth. Applied Physics Letters, 90 (1). 11913pp. doi:10.1063/1.2429901
Plain TextMoore, J. C., Kasliwal, V., Baski, A. A., Ni, X., Özgür, Ü., Morkoç, H. (2007) Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth. Applied Physics Letters, 90 (1). 11913pp. doi:10.1063/1.2429901
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Ni, X., Özgür, Ü., Baski, A. A., Morkoç, H., Zhou, Lin, Smith, David J., Tran, C. A. (2007) Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 90 (18). 182109pp. doi:10.1063/1.2735558
Ni, X., Özgür, Ü., Fu, Y., Biyikli, N., Xie, J., Baski, A. A., Morkoç, H., Liliental-Weber, Z. (2006) Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth. Applied Physics Letters, 89 (26). 262105pp. doi:10.1063/1.2423328
Ni, X., Özgür, Ü., Morkoç, H., Liliental-Weber, Z., Everitt, H. O. (2007) Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition. Journal of Applied Physics, 102 (5). 53506pp. doi:10.1063/1.2773692
Özgür, Ü., Ni, X., Fu, Y., Morkoç, H., Everitt, H. O. (2006) Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN. Applied Physics Letters, 89 (26). 262117pp. doi:10.1063/1.2424677
Ni, X., Wu, M., Lee, J., Li, X., Baski, A. A., Özgür, Ü., Morkoç, H. (2009) Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 95 (11). 111102pp. doi:10.1063/1.3225157
Ni, X., Lee, J., Wu, M., Li, X., Shimada, R., Özgür, Ü., Baski, A. A., Morkoç, H., Paskova, T., Mulholland, G., Evans, K. R. (2009) Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95 (10). 101106pp. doi:10.1063/1.3224192
Xie, J., Özgür, Ü., Fu, Y., Ni, X., Morkoç, H., Inoki, C. K., Kuan, T. S., Foreman, J. V., Everitt, H. O. (2007) Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork. Applied Physics Letters, 90 (4). 41107pp. doi:10.1063/1.2433754
Chevtchenko, S. A., Moore, J. C., Özgür, Ü., Gu, X., Baski, A. A., Morkoç, H., Nemeth, B., Nause, J. E. (2006) Comparative study of the (0001) and (0001¯) surfaces of ZnO. Applied Physics Letters, 89 (18). 182111pp. doi:10.1063/1.2378589
Ni, X., Özgür, Ü., Chevtchenko, S., Nie, J., Morkoç, Hadis, Devaty, Robert P., Choyke, Wolfgang J. (2008) Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition. Materials Science Forum, 600. 1273-1276 doi:10.4028/www.scientific.net/msf.600-603.1273
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